| PART |
Description |
Maker |
| CD214C-B330 CD214C-B330LF CD214C-B320 CD214C-B320L |
CD214C-B320 ~ B360 Schottky Barrier Rectifier Chip Diode
|
BOURNS[Bourns Electronic Solutions]
|
| CD214C-T33A CD214C-T30CA CD214C-T33CA CD214C-T60CA |
CD214C Transient Voltage Suppressor Diode Series 400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
CD214C Transient Voltage Suppressor Diode Series 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
|
Bourns Inc.
Bourns, Inc.
|
| CD214C-B320 CD214C-B360 |
CD214C-B320 ~ B360 Schottky Barrier Rectifier Chip Diode 3 A, 20 V, SILICON, RECTIFIER DIODE, DO-214AB
CD214C-B320 ~ B360 Schottky Barrier Rectifier Chip Diode 3 A, 60 V, SILICON, RECTIFIER DIODE, DO-214AB
|
Bourns, Inc.
|
| 1N4002G 1N4007G 1N4001G 1N4003G 1N4004G 1N4005G 1N |
400V, 1.0A glass passivated rectifier
1000V, 1.0A glass passivated rectifier
50V, 1.0A glass passivated rectifier
200V, 1.0A glass passivated rectifier
100V, 1.0A glass passivated rectifier
600V, 1.0A glass passivated rectifier
800V, 1.0A glass passivated rectifier
|
http://
WTE[Won-Top Electronics]
|
| 1N5985B ON0014 1N6003B 1N5993B 1N5992B 1N5987B 1N5 |
3.3 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH
6.2 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35玻璃封装,5.6V齐纳电压，齐纳稳压二极管) 5.6 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35玻璃封装,6.8V齐纳电压，齐纳稳压二极管) 6.8 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35玻璃封装,12V齐纳电压，齐纳稳压二极管)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35玻璃封装,15V齐纳电压，齐纳稳压二极管)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35玻璃封装,18V齐纳电压，齐纳稳压二极管)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35玻璃封装,10V齐纳电压，齐纳稳压二极管)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35玻璃封装,2.4V齐纳电压，齐纳稳压二极管)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35玻璃封装,4.3V齐纳电压，齐纳稳压二极管)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35玻璃封装,3.3V齐纳电压，齐纳稳压二极管)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35玻璃封装,3V齐纳电压，齐纳稳压二极管)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35玻璃封装,4.7V齐纳电压，齐纳稳压二极管)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35玻璃封装,5.1V齐纳电压，齐纳稳压二极管)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35玻璃封装,13V齐纳电压，齐纳稳压二极管)
From old datasheet system
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35?荤?灏??,6.2V榻?撼?靛?锛??绾崇ǔ??????)
|
MOTOROLA INC
ON Semiconductor
|
| 60S05-13 |
6 Amp Axial-Lead Glass Passivated Rectifier 50 - 1000 Volts Glass Passivated Chip
|
Micro Commercial Compon...
|
| SZ1.5A330 SZ1.5A220 SZ1.5A240 SZ1.5A270 SZ1.5A300 |
HIGH VOLTAGE ZENER DIODES
240 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE HERMETIC SEALED, GLASS PACKAGE-2
270 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE HERMETIC SEALED, GLASS PACKAGE-2
220 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE HERMETIC SEALED, GLASS PACKAGE-2
330 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE HERMETIC SEALED, GLASS PACKAGE-2
300 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE HERMETIC SEALED, GLASS PACKAGE-2
430 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE HERMETIC SEALED, GLASS PACKAGE-2
470 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE HERMETIC SEALED, GLASS PACKAGE-2
390 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE HERMETIC SEALED, GLASS PACKAGE-2
|
Solid States Devices, Inc
Solid State Devices, Inc.
SOLID STATE DEVICES INC
|
| 20KW256A 20KW160 20KW160A 20KW216 20KW216A 20KW240 |
256.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
160.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
192.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
112.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
300.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
204.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
232.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
280.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
172.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
180.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
|
MDE Semiconductor
|
| 1N5393GP 1N5399GP 1N5391GP 1N5392GP 1N5394GP 1N539 |
Glass Passivated Junction Rectifier(????荤?缁???存???
Glass Passivated Junction Rectifier(钝化玻璃结型整流 结玻璃钝化整流（钝化玻璃结型整流器）
GLASS PASSIVATED JUNCTION RECTIFIER 玻璃钝化整流
|
GE Security, Inc.
GE[General Semiconductor]
|
| RU2GGF RU2JGF RU2AGF RU2BGF RU2DGF |
Ultra Fast Recovery Pack: DO-15
SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE:50 TO 1000V CURRENT: 1.5A
(RU2AGF - RU2JGF) SINTERED GLASS JUNCTION
|
Gulf Semiconductor
|
| 1N4007G 1N4004G 1N4001G 1N4002G 1N4002 1N4006 1N40 |
Rectifiers(整流 1 A, 1000 V, SILICON, SIGNAL DIODE
(1N4001G - 1N4007G) Rectifiers(Rugged glass package / using a high temperature alloyed construction)
IC REG VOLT 4.8V 240MA SOT-23
Rectifiers(Rugged glass package/ using a high temperature alloyed construction)
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 50 V, SILICON, SIGNAL DIODE
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 整流器（坚固的玻璃封装，采用高温合金建设
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 400 V, SILICON, SIGNAL DIODE
|
PHILIPS[Philips Semiconductors]
http://
NXP Semiconductors N.V.
|
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