| PART |
Description |
Maker |
| CAT22C12P-20 CAT22C12P-30 CAT22C12PI-30 CAT22C12PI |
NVRAM (EEPROM Based) NVRAM中（EEPROM的基础
|
ITT, Corp.
|
| M41ST87WMX6 M41ST87WMX6TR M41ST87YMX6 M41ST87YMX6T |
5.0 V and 3.3/3.0 V secure serial RTC and NVRAM supervisor with tamper detection and 128 bytes of clearable NVRAM
|
STMicroelectronics
|
| DS1380N DS1380SN |
NVRAM (Battery Based)
|
|
| DS1646-120 DS1646P-120 |
NVRAM (Battery Based) NVRAM中（基于电池
|
Maxim Integrated Products, Inc.
|
| DS1646L-120 |
NVRAM (Battery Based) NVRAM中（基于电池
|
Maxim Integrated Products, Inc.
|
| DS1230AB-150-IND DS1230Y-150-IND DS1230Y-70-IND DS |
NVRAM (Battery Based) NVRAM中（基于电池
|
Epson ToYoCom, Corp.
Maxim Integrated Products, Inc.
|
| M41T56C64MY6F |
Serial Real Time Clock with 56 bytes of NVRAM 64 Kbit (8192 bit x 8) EEPROM
|
意法半导
|
| STK12C68-5S30 STK12C68-5W30 |
Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):16A; Gate Trigger Current (QI), Igt:35mA; Package/Case:3-TO-220; Current, It av:16A; Gate Trigger Current Max, Igt:35mA
NVRAM (EEPROM Based) NVRAM中（EEPROM的基础
|
Electronic Theatre Controls, Inc.
|
| M40SZ100WMQ6F |
3 V NVRAM supervisor for LPSRAM
|
ST Microelectronics
|
| M40Z300MH1E M40Z300MH1F M40Z300MH6E M40Z300MH6F M4 |
5 V or 3 V NVRAM supervisor for up to 8 LPSRAMs
|
STMicroelectronics
|
| AN1011 |
BATTERY TECHNOLOGY USED IN NVRAM PRODUCTS FROM ST
|
SGS Thomson Microelectronics
|
| M4T32-BR12SH M41ST85 M41ST85W M41ST85WMH M41ST85WM |
5.0 OR 3.0V, 512 bit 64 x 8 SERIAL RTC and NVRAM SUPERVISOR
|
STMICROELECTRONICS[STMicroelectronics]
|
