PART |
Description |
Maker |
BAS16LT1 ON0114 |
CASE 31808, STYLE 8 SOT23 (TO236AB) SILICON, SIGNAL DIODE, TO-236AB CASE 31808/ STYLE 8 SOT23 (TO236AB) From old datasheet system
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Motorola Mobility Holdings, Inc. Motorola Inc MOTOROLA[Motorola, Inc]
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BC857BWT1 BC857AWT1 BC858BWT1 BC856BWT1 BC858AWT1 |
CASE 419-02, STYLE 3 SOT-323/SC-70 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR CASE 419-02, STYLE 3 SOT-323/SC-70 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR CASE 419-02/ STYLE 3 SOT-323/SC-70 CASE 419-02 STYLE 3 SOT-323/SC-70
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Motorola Mobility Holdings, Inc. Motorola Inc MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
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X9315 X9315WSZ-2.7 X9315TM X9315TM-2.7 X9315TMI X9 |
:SEMITOP 3; Centres, fixing:52.5mm; Current, Ic av:40A; Current, Ic continuous b max:32A; RoHS Compliant: Yes max:2.1V; Case style:SEMITOP 4; Current, Icm pulsed:100A; Temperature, Tj RoHS Compliant: Yes THYRISTOR MODULE, 3 PHASETHYRISTOR MODULE, 3 PHASE; Voltage, Vrrm:1600V; Case style:SEMITOP 3; Current, It rms:68A; Current, Itsm:450A; Voltage, Vgt :SEMITOP-4; Voltage, Vceo:1200V; Voltage, Vce sat max:2.15V; Current, Ic continuous a continuous a max:17A; Voltage, Vce sat max:2.5V; Case style:SEMITOP 3; Current, Icm RoHS Compliant: Yes IGBT MODULE, H BRIDGE 1200VIGBT MODULE, H BRIDGE 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3.2V IGBT MODULE, DUAL 600V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:54A IGBT MODULE, CHOPPER 1200VIGBT MODULE, CHOPPER 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V IGBT MODULE 6 PACK 114A 1200V TRENCHIGBT MODULE 6 PACK 114A 1200V TRENCH; Transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Voltage :SEMITOP 2; Centres, fixing:38mm; Current, Ic av:23A; Current, Ic continuous b max:15A; RoHS Compliant: Yes IGBT MODULE, 6 PACK 1200VIGBT MODULE, 6 PACK 1200V; Transistor type:IGBT; Case style:SEMITOP 3; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V IGBT MODULE, DUAL 1200VIGBT MODULE, DUAL 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V; Current, Ic MOSFET MODULE, 6 PACK 75VMOSFET MODULE, 6 PACK 75V; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:100V; Case style:SEMITOP 2 RECTIFIER SCHOTTKY SINGLE 1A 70V 25A-ifsm 0.8V-vf 0.5mA-ir DO-41 5K/AMMO DIODE SCHOTTKY SINGLE 10V 150mW 0.37V-vf 30mA-IFM 1mA-IF 1uA-IR SOT-523 3K/REEL IGBT MODULE, DUAL 600V; Transistor type:IGBT; Case style:SEMITOP 1; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:30A; Current, Icm pulsed:24A; Power, Pd:1400W; Time, rise:35ns; Centres, fixing:28.5mm; Low Noise, Low Power, 32 Taps 10K DIGITAL POTENTIOMETER, INCREMENT/DECREMENT CONTROL INTERFACE, 32 POSITIONS, PDIP8 IGBT MODULE 6 PACK 96A 600V TRENCHIGBT MODULE 6 PACK 96A 600V TRENCH; Transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Current, Ic continuous a max:100A IGBT MODULE, 6 PACK 1200VIGBT MODULE, 6 PACK 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V; Current, Ic continuous a max:22A; Current, Icm pulsed:44A; Power, Pd:1600W; Time,
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http:// INTERSIL[Intersil Corporation] Intersil, Corp.
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102-2618-Z-F1-F2-F3-F4 102-2616-Z-F1-F2-F3-F4 102- |
OUTLINE, WR102 Z-STYLE COMBINER-DIVIDER (HYBRID-COUP.)
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Advanced Technical Materials Inc.
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BAS21LT1 |
CASE 318 08, STYLE 8 SOT 23 (TO 236AB)
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MOTOROLA[Motorola, Inc]
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BAS7004LT1 |
CASE 318-08, STYLE 12 SOT-23 TO-236AB CASE 318-08 STYLE 12 SOT-23 TO-236AB
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Motorola, Inc. MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
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BAS4006LT1 |
CASE 318-08/ STYLE 11 SOT-23 (TO-236AB) CASE 318-08, STYLE 11 SOT-23 (TO-236AB)
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Motorola Inc MOTOROLA[Motorola, Inc]
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MBT3904DW1T1 MBT3904DW1T1_D ON0485 |
SOT-63/SC-8 CASE 419B STYLE 1 From old datasheet system
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ON Semi
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2MBI100NE-120 |
CAPACITOR, CASE A, 22UF, 2.5V; Application:Solid; Capacitance:22uF; Tolerance, capacitance:20%; Series:NOS; Voltage, rating:2.5V; Capacitor dielectric type:Niobium Oxide; Case style:A; Depth, external:1.6mm; Length / Height, RoHS Compliant: Yes IGBT MODULE ( N series )
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FUJI ELECTRIC HOLDINGS CO., LTD.
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2N5551 2N5550 ON0062 |
Amplifier Transistors From old datasheet system CASE 29-4, STYLE TO-2 (TO-26AA)
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MOTOROLA INC MOTOROLA[Motorola, Inc] ON Semi http://
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