| PART |
Description |
Maker |
| CYM1822LHV-20C CYM1822HV-20C CYM1822HV-25C CYM1822 |
x32 SRAM Module X32号的SRAM模块
|
YEONHO Electronics Co., Ltd.
NXP Semiconductors N.V.
|
| I282485MA-33 I282485MB-33 I282485MA-25 |
x32 SRAM Module X32号的SRAM模块
|
Glenair, Inc.
|
| IDT7MP6151S33M |
x32 SRAM Module X32号的SRAM模块
|
Murata Manufacturing Co., Ltd.
|
| AS8S128K32Q-45/XT AS8S128K32Q-45/IT AS8S128K32Q-45 |
Thick Film Chip Resistor - RMC 1/16S 95.3K 1% R
x32 SRAM Module X32号的SRAM模块
|
TOKO, Inc.
Amphenol, Corp.
|
| PUMA2S16000M-35 PUMA2S16000M-020 PUMA77S16000M-025 |
30MHZ, 8 LAP, IND TEMP, GREEN(FPGA)
15NS, 100 PQFP, IND TEMP(EPLD)
25NS, 100 PQFP, IND TEMP(EPLD)
20NS, 68 PLCC, COM TEMP(EPLD)
30MHZ, 3.3V, 8 LAP, IND TEMP(FPGA)
7NS, 100 TQFP, COM TEMP(EPLD)
32 MC CPLD,1.8V ISP CPLD,44 PIN TQFP(EPLD)
x32 SRAM Module X32号的SRAM模块
|
Fujitsu, Ltd.
|
| IDT71V433S11PFI |
x32 Fast Synchronous SRAM 32K X 32 CACHE SRAM, 11 ns, PQFP100
|
Integrated Device Technology, Inc.
|
| K7A401800B-QC K7A403600B-QC K7A403200B-QC K7A40360 |
128Kx36/x32 & 256Kx18 Synchronous SRAM
128Kx36/x32 & 256Kx18 Synchronous SRAM 128Kx36/x32
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| 5962-01533 UT8Q512K32-SWC 8Q512K32 UT8Q512K32 UT8Q |
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose 3E4(30krad(Si)).
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose 5E4(50krad(Si)).
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose 1E4(10krad(Si)).
16Megabit SRAM MCM 16Megabit的SRAM亿立方米
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose none
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose none.
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose 1E4(10krad(Si)).
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose 5E4(50krad(Si)).
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose 3E4(30krad(Si)).
|
Aeroflex Circuit Techno...
http://
AEROFLEX[Aeroflex Circuit Technology]
Aeroflex Inc.
Aeroflex, Inc.
|
| HLX6228AEN HLX6228ASF HLX6228ABF HLX6228ABN HLX622 |
128K x 8 STATIC RAM-Low Power SOI
128K x 8 STATIC RAM?Low Power SOI
128K x 8 STATIC RAMLow Power SOI 128K的8静态RAM？低功耗绝缘硅
|
List of Unclassifed Man...
List of Unclassifed Manufacturers
ETC[ETC]
Honeywell Sensing
Electronic Theatre Controls, Inc.
|
| 5962L9960701QUA 5962L9960701QUC 5962L9960701QUX 59 |
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 5E4(50krad)(Si)
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 5E4(50krad)(Si)
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 5E4(50krad)(Si)
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 5E4(50krad)(Si)
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 5E4(50krad)(Si)
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 5E4(50krad)(Si)
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 1E4(10krad)(Si)
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 1E4(10krad)(Si)
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 5E4(50krad)(Si)
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 3E4(30krad)(Si)
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si)
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 1E4(10krad)(Si)
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 1E4(10krad)(Si)
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si)
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 1E4(10krad)(Si)
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 3E4(30krad)(Si)
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si)
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 3E4(30krad)(Si)
512K x 8 SRAM. 25ns access time, 3.3V operation. Lead finish factory option. Extended industrial temperature range flow.
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 1E4(10krad)(Si)
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 3E4(30krad)(Si)
512K x 8 SRAM. 20ns access time, 3.3V operation. Lead finish gold. Extended industrial temperature range flow.
512K x 8 SRAM. 25ns access time, 3.3V operation. Lead finish gold. Extended industrial temperature range flow.
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si)
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 1E4(10krad)(Si)
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 1E4(10krad)(Si)
|
Aeroflex Circuit Technology
|
| GS820E32AQ-5I GS820E32AT-5I GS820E32AT/Q-150/138/1 |
64K x 32 2M Synchronous Burst SRAM
x32 Fast Synchronous SRAM X32号，快速同步SRAM
|
Electronic Theatre Controls, Inc.
Aeroflex, Inc.
|
