| PART |
Description |
Maker |
| HY5DS283222BF HY5DS283222BF-28 HY5DS283222BF-33 HY |
GDDR SDRAM - 128Mb
128M(4Mx32) GDDR SDRAM
|
Hynix Semiconductor
|
| HY5DU283222AF-2 HY5DU283222AF-25 HY5DU283222AF-33 |
128M(8Mx16) GDDR SDRAM
128M(4Mx32) GDDR SDRAM
|
HYNIX[Hynix Semiconductor]
|
| K4D263238G-GC K4D263238G-GC2A K4D263238G-GC33 K4D2 |
128Mbit GDDR SDRAM
|
Samsung semiconductor
|
| HY5DU561622CTP |
256M gDDR SDRAM
|
Hynix
|
| HY5DU283222AQP HY5DU283222AQP-33 HY5DU283222AQP-36 |
128M(4Mx32) GDDR SDRAM
|
Hynix Semiconductor
|
| W9412G2CB |
1M X 4 BANKS X 32 BITS GDDR SDRAM
|
Winbond
|
| HY5DU283222F-36 HY5DU283222F-28 HY5DU283222F-26 |
128M(4Mx32) GDDR SDRAM
|
Hynix Semiconductor Inc.
|
| HY5DS573222F-36 HY5DS573222F-28 HY5DS573222FP-4 HY |
256M(8Mx32) GDDR SDRAM 8M X 32 DDR DRAM, 0.6 ns, PBGA144
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| K4D261638F-TC33 K4D261638F-TC25 K4D261638F-TC40 K4 |
128Mbit GDDR SDRAM 128Mbit GDDR SDRAM内存
8M X 16 DDR DRAM, 0.55 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66
8M X 16 DDR DRAM, 0.55 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
DiCon Fiberoptics, Inc.
|
| HYS64V4200GDL-7.5 HYS64V8220GDL HYS64V4200GDL-8-X |
x64 SDRAM Module
3.3 V SDRAM Modules(3.3 V 同步动态RAM模块)
3.3 V SDRAM Module(3.3 V SDRAM 模块)
4M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, ZMA144
|
SIEMENS AG
INFINEON TECHNOLOGIES AG
|
