| PART |
Description |
Maker |
| HY5DS283222BF HY5DS283222BF-28 HY5DS283222BF-33 HY |
GDDR SDRAM - 128Mb
128M(4Mx32) GDDR SDRAM
|
Hynix Semiconductor
|
| HY5DS573222F-28 HY5DS573222FP-28 HY5DS573222FP-36 |
GDDR SDRAM - 256Mb
256M(8Mx32) GDDR SDRAM
|
Hynix Semiconductor
|
| K4D553238F-GC33 K4D553238F-GC36 K4D553238F-GC2A K4 |
256Mbit GDDR SDRAM 56Mbit GDDR SDRAM内存
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K4D26323QG K4D26323QG-GC33 K4D26323QG-GC25 K4D2632 |
128Mbit GDDR SDRAM 128Mbit GDDR SDRAM内存
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| K4D263238G-GC K4D263238G-GC2A K4D263238G-GC33 K4D2 |
128Mbit GDDR SDRAM
|
Samsung semiconductor
|
| HY5DU121622CTP |
512 Mb GDDR SDRAM
|
Hynix Semiconductor
|
| HY5DU573222AFM-33 HY5DU573222AFM-36 HY5DU573222AFM |
256M(8Mx32) GDDR SDRAM
|
Hynix Semiconductor
|
| W9412G2IB |
1M X 4 BANKS X 32 BITS GDDR SDRAM
|
Winbond
|
| HY5DU283222F-36 HY5DU283222F-28 HY5DU283222F-26 |
128M(4Mx32) GDDR SDRAM
|
Hynix Semiconductor Inc.
|
| K4D263238G-GC360 K4D263238G-GC33 K4D263238G-GC2A0 |
4M X 32 DDR DRAM, 0.6 ns, PBGA144 FBGA-144
128Mbit GDDR SDRAM 128Mbit GDDR SDRAM内存
4M X 32 DDR DRAM, 0.55 ns, PBGA144 FBGA-144
4M X 32 DDR DRAM, 0.55 ns, PBGA144 LEAD FREE, FBGA-144
|
Sensitron Semiconductor
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HY57V56820BT HY57V56820BLT-S HY57V56820BT-S HY57V5 |
32Mx8|3.3V|8K|K|SDR SDRAM - 256M
SDRAM|4X8MX8|CMOS|TSOP|54PIN|PLASTIC
4 Banks X 8M X 8Bit Synchronous DRAM
SDRAM - 256Mb
|
Hynix Semiconductor
|
| HYS64V4200GDL-7.5 HYS64V8220GDL HYS64V4200GDL-8-X |
x64 SDRAM Module
3.3 V SDRAM Modules(3.3 V 同步动态RAM模块)
3.3 V SDRAM Module(3.3 V SDRAM 模块)
4M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, ZMA144
|
SIEMENS AG
INFINEON TECHNOLOGIES AG
|
