| PART |
Description |
Maker |
| HYS64D64020GBDL-6-C HYS64D64020HBDL-6-C |
DDR SDRAM Modules - 512 MB (64Mx64) PC2700 2-bank; Available 2Q04
DDR SDRAM Modules - 512MB (64Mx64) PC2700 2-bank, FBGA based; Available 3Q04
|
Infineon
|
| M366S6453DTS |
64Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Electronic
|
| M464S0924BT1 M464S1724BT1SDRAMSODIMM |
8M x 64 SDRAM SODIMM based on 8M x 16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Serial Presence Detect
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD Serial Presence Detect
|
Samsung Electronic
|
| M464S0924CT1 |
8M x 64 SDRAM SODIMM based on 8M x 16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Electronic
|
| NT128S64VH8C0GM-75B NT128S64VH8C0GM-8B |
128Mb: 16Mx64 SDRAM SODIMM based 8Mx16, 4bands, 4K refresh, 3.3V synchronous DRAMs with SPD
|
NANYA
|
| M464S1654CTS |
16Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Electronic
|
| M463S3254DK1 |
32Mx64 SDRAM SODIMM based on 32Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Electronic
|
| M464S0424FTS |
4Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Electronic
|
| W3EG6464S-BD4 |
512MB - 64Mx64 DDR SDRAM UNBUFFERED w/PLL 512MB 64Mx64 DDR SDRAM的缓冲瓦锁相
|
STMicroelectronics N.V.
|
| WED3DG6466V75D1 WED3DG6466V7D1 WED3DG6466V-D1 WED3 |
512MB -64Mx64 SDRAM UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
| W3DG6465V7D1 W3DG6465V-D1 W3DG6465V75D1 W3DG6465V1 |
512MB- 64Mx64 SDRAM UNBUFFERED
|
http://
White Electronic Designs Corporation
|
| WED3DG6466V10D2 WED3DG6466V7D2 WED3DG6466V75D2 WED |
512MB -64Mx64, SDRAM UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
