| PART |
Description |
Maker |
| KBE00S003M |
1Gb NAND*2 256Mb Mobile SDRAM*2
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KBE00S003M KBE00S003M-D411 |
1Gb NAND*2 256Mb Mobile SDRAM*2
|
Samsung Electronic
|
| PC28F256G18AF PC28F256G18AE PC28F128G18FF PC28F00A |
128Mb, 256Mb, 512Mb, 1Gb StrataFlash Memory
|
Micron Technology
|
| KBE00S009M-D411 KBE00S009M |
From old datasheet system
1Gb NAND x 2 256Mb Mobile SDRAM x 2
|
SAMSUNG[Samsung semiconductor]
|
| CR4202AA CR4202AB CR6002AA CR0300 CR0602AB CR0602A |
Thyristors (SiBOD Breakover Devices)
88 V, 100 A, SILICON SURGE PROTECTOR, DO-214AA DO-214, 2 PIN
40 V, 50 A, SILICON SURGE PROTECTOR, DO-214AA DO-214, 2 PIN
180 V, 500 A, SILICON SURGE PROTECTOR MODIFIED TO-220, 3 PIN
88 V, 500 A, SILICON SURGE PROTECTOR, DO-214AA DO-214, 2 PIN
160 V, 50 A, SILICON SURGE PROTECTOR, DO-214AA DO-214, 2 PIN
|
List of Unclassifed Man...
List of Unclassifed Manufacturers
ETC[ETC]
N.A.
Crydom, Inc.
|
| K5D5657ACM-F015 |
256Mb NAND and 256Mb Mobile SDRAM 256Mb的NAND闪存56Mb移动SDRAM
|
Samsung Semiconductor Co., Ltd.
|
| HYMP564S648-E3 HYMP564S648-C4 HYMP532S646-E3 HYMP5 |
200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb 1st ver.
DDR2 SDRAM - SO DIMM 256MB
DDR2 SDRAM - SO DIMM 512MB
DDR2 SDRAM - SO DIMM 1GB
|
HYNIX[Hynix Semiconductor]
|
| W3EG64128S-AD4 |
1GB - 2x64Mx64 DDR SDRAM UNBUFFERED w/PLL 1GB 2x64Mx64 DDR SDRAM的缓冲瓦锁相
|
Electronic Theatre Controls, Inc.
|
| BYS10 BYS10-25 BYS10-35 |
Schottky Barrier Rectifier(低反向电流肖特基势垒整流
1.5 A, 25 V, SILICON, RECTIFIER DIODE, DO-214 SIMILAR TO SMA, 2 PIN
1.5 A, 35 V, SILICON, RECTIFIER DIODE, DO-214 SIMILAR TO SMA, 2 PIN
|
Vishay Intertechnology,Inc.
Vishay Beyschlag
|
| 1205-69-5 |
FOR USE WITH RG-9, 9A, 9B, 214, 225 & 393/U CABLE
|
Winchester Electronics ...
|
