| PART |
Description |
Maker |
| HM-6564202 HM4-65642B_883 HM1-65642_883 HM1-65642B |
RAM, Asynchronous CMOS, 8Kx8, Access Time 150ns, 75-250A
8K x 8 Asynchronous CMOS Static RAM
|
INTERSIL[Intersil Corporation]
|
| AM9150-20 AM9150-20DC AM9150-20DCB AM9150-20LC |
1024x4 High-Speed Static R/W RAM
|
Advanced Micro Devices
|
| MA5114 |
Radiation hard 1024x4 Bit Static RAM
|
Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
|
| UPB100474B-15 UPB100474B-10 UPB100474B-6 |
1,024 x 4-bit 100K ECL RAM. Access time(max) 15 ns.
1,024 x 4-bit 100K ECL RAM. Access time(max) 10 ns.
1,024 x 4-bit 100K ECL RAM. Access time(max) 6 ns.
|
NEC
|
| A43L2616V-6PH A43L2616V-7PH |
Cycle time:6ns; 166MHz CL=3 access time:5.0ns 1M x 16bit x 4banks synchronous DRAM
Cycle time:7ns; 143MHz CL=3 access time:5.4ns 1M x 16bit x 4banks synchronous DRAM
|
AMIC Technology
|
| AS7C31025A-20TJI AS7C1025A AS7C1025A-10JC AS7C1025 |
3.3V 128K x 8 CM0S SRAM (revolutionary pinout), 12ns access time
3.3V 128K x 8 CM0S SRAM (revolutionary pinout), 20ns access time
5V 128K x 8 CM0S SRAM (revolutionary pinout), 20ns access time
5V/3.3V 128K X 8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 10 ns, PDSO32
5V/3.3V 128K X 8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 20 ns, PDSO32
High Speed CMOS Logic Triple 3-Input NAND Gates 14-SOIC -55 to 125
Parallel-Load 8-Bit Shift Registers 16-VQFN -40 to 85
Parallel-Load 8-Bit Shift Registers 16-SO -40 to 85
High Speed CMOS Logic Quad 2-Input AND Gates 14-SOIC -55 to 125
High Speed CMOS Logic Quad 2-Input AND Gates 14-TSSOP -55 to 125
Parallel-Load 8-Bit Shift Registers 16-SOIC -40 to 85
Parallel-Load 8-Bit Shift Registers 16-TSSOP -40 to 85
5V 128K x 8 CM0S SRAM (revolutionary pinout), 12ns access time
5V 128K x 8 CM0S SRAM (revolutionary pinout), 15ns access time
3.3V 128K x 8 CM0S SRAM (revolutionary pinout), 15ns access time
|
Alliance Semiconductor ...
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| UT62W1024LC-35L UT62W1024LC-35LL UT62W1024LC-55L U |
Access time: 35 ns, 128 K x 8 Bit wide range low power CMOS SRAM
Access time: 55 ns, 128 K x 8 Bit wide range low power CMOS SRAM
Access time: 70 ns, 128 K x 8 Bit wide range low power CMOS SRAM
|
UTRON Technology
|
| A67L7332SERIES A67L7336SERIES A67L8316SERIES A67L8 |
Cycle time:7ns; access time:4.5ns; 256K x 16 LVTTL, pipelined DBA SRAM
Cycle time:7ns; access time:4ns; 256K x 16 LVTTL, pipelined DBA SRAM
Cycle time:7ns; access time:4.2ns; 256K x 16 LVTTL, pipelined DBA SRAM
Cycle time:7ns; access time:4.2ns; 128K x 32 LVTTL, pipelined DBA SRAM
Cycle time:7ns; access time:4ns; 128K x 32 LVTTL, pipelined DBA SRAM
256K X 16/18. 128K X 32/36 LVTTL. Pipelined DBA SRAM 256 × 16/18128K的X 32/36 LVTTL等级。流水线数据库管理员的SRAM
256K X 16/18, 128K X 32/36 LVTTL, Pipelined DBA SRAM
Cycle time:7ns; access time:4.5ns; 128K x 32 LVTTL, pipelined DBA SRAM
Cycle time:7.5ns; access time:4.2ns; 128K x 32 LVTTL, pipelined DBA SRAM
Cycle time:8.5ns; access time:4.5ns; 128K x 32 LVTTL, pipelined DBA SRAM
|
AMIC Technology, Corp.
|
| AS4LC256K16E0-35JC AS4LC256K16E0-35TC AS4LC256K16E |
3.3V 256K x 16 CM0S DRAM (EDO), 60ns RAS access time
3.3V 256K x 16 CM0S DRAM (EDO), 45ns RAS access time
3.3V 256K x 16 CM0S DRAM (EDO), 35ns RAS access time
x16 EDO Page Mode DRAM
|
Alliance Semiconductor
|
| CDP68HC68T107 |
CMOS Serial Real-Time Clock With RAM and Power Sense/Control
|
Intersil Corporation
|
