| PART |
Description |
Maker |
| HVV1214-100 HVV1214-100-EK |
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200渭s Pulse, 10% Duty For Ground Based Radar Applications
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty For Ground Based Radar Applications
|
HVVi Semiconductors, Inc.
|
| 1214-550P |
550 Watts - 300楼矛s, 10%, 42V L-Band Pulsed Radar 1200 - 1400 MHz
550 Watts - 300μs, 10%, 42V L-Band Pulsed Radar 1200 - 1400 MHz
|
Microsemi Corporation
|
| CM1400E3U-24NF |
Mega Power Chopper IGBTMOD 1400 Amperes/1200 Volts
|
Powerex Power Semicondu...
|
| CGHV14250-TB CGHV14250F CGHV14250F-AMP CGHV14250P |
250 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems
|
Cree, Inc
|
| CGHV14800F-AMP CGHV14800-TB |
800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems
|
Cree, Inc
|
| PTVA123501FCV1R250 |
Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 1200 ?1400 MHz
|
Infineon Technologies A...
|
| ADF4360-5 ADF4360-5BCP ADF4360-5BCPRL ADF4360-5BCP |
Integrated Synthesizer and VCO TELECOM, CELLULAR, BASEBAND CIRCUIT, QCC24
Integrated Integer-N Synthesizer and VCO - Output Frequency 1200 to 1400
|
Analog Devices, Inc.
|
| IRKCL240-12S30 IRKCL240-12S10 IRKCL240-14S20NPBF I |
240 A, 1200 V, SILICON, RECTIFIER DIODE
250 A, 1200 V, SILICON, RECTIFIER DIODE
250 A, 1400 V, SILICON, RECTIFIER DIODE
|
VISHAY SEMICONDUCTORS
|
| IRKCL240-12S20 IRKCL240-12S10 IRKCL240-14S30 |
250 A, 1200 V, SILICON, RECTIFIER DIODE
240 A, 1400 V, SILICON, RECTIFIER DIODE
|
VISHAY INTERTECHNOLOGY INC
|
| PE-65502X PE-62252A PE-5163X PE-5160X PE-65457 PE- |
LONG BBL 2瓦特脉冲静电屏蔽00毫瓦的脉冲，射频脉冲和控制变压器
2 Watt Pulse Electrostatically Shielded, 500 mW Pulse, RF Pulse and Control Transformers 2瓦特脉冲静电屏蔽00毫瓦的脉冲，射频脉冲和控制变压器
POT 20K OHM 9MM HORZ MET BUSHING
|
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
ETC[ETC]
|
