| PART |
Description |
Maker |
| BUK474-200A BUK474-200B |
PowerMOS transistor Isolated version of BUK454-200A/B(BUK454-200A/B隔离版本的功率MOS场效应管)
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| 200HFR80PV 200HF 200HF120MSV 200HF120MV 200HF120PB |
From old datasheet system
STANDARD RECOVERY DIODES Stud Version
800V 200A Std. Recovery Diode in a DO-205AC (DO-30)package
400V 200A Std. Recovery Diode in a DO-205AC (DO-30)package
1200V 200A Std. Recovery Diode in a DO-205AC (DO-30)package
|
IRF[International Rectifier]
|
| IRKLF200-04HK IRKHF200-04HK IRKLF200-08HK IRKLF200 |
200 A, MAGN-A-pak Power Modules(200A,4V,快速可控硅/可控硅L结构MAGN-A-pak功率模块)
200 A, MAGN-A-pak Power Modules(200A,4V,快速可控硅/二极H结构MAGN-A-pak功率模块)
200 A, MAGN-A-pak Power Modules(200A,8V,快速可控硅/可控L结构MAGN-A-pak功率模块)
200 A, MAGN-A-pak Power Modules(200A,8V,快速可控硅/二极H结构MAGN-A-pak功率模块) 200，磁共振-甲柏功率模块00安培V的，快速可控硅/二极结构磁共甲柏功率模块
200 A, MAGN-A-pak Power Modules(200A,12V,快速可控硅/二极H结构MAGN-A-pak功率模块) 200，磁共振-甲柏功率模块00安培2V的，快速可控硅/二极结构磁共甲柏功率模块
200 A, MAGN-A-pak Power Modules(200A,4V,快速可控硅/可控硅T结构MAGN-A-pak功率模块) 200，磁共振-甲柏功率模块200安培4V电压，快速可控硅/可控结构磁共甲柏功率模块
200 A, MAGN-A-pak Power Modules(200A,12V,快速可控硅/可控硅T结构MAGN-A-pak功率模块) 200，磁共振-甲柏功率模块200安培2V的，快速可控硅/可控结构磁共甲柏功率模块
200 A, MAGN-A-pak Power Modules(200A,8V,蹇?????纭?浜??绠∪缁??MAGN-A-pak???妯″?)
|
International Rectifier, Corp.
|
| 201CMQ045 201CMQ 201CMQ035 201CMQ040 |
SCHOTTKY RECTIFIER
35V 200A Schottky Common Cathode Diode in a TO-244AB Isolated package
40V 200A Schottky Common Cathode Diode in a TO-244AB Isolated package
45V 200A Schottky Common Cathode Diode in a TO-244AB Isolated package
|
IRF[International Rectifier]
|
| 209CNQ150 209CNQ 209CNQ135 |
SCHOTTKY RECTIFIER 肖特基整流器
135V 200A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package
150V 200A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| C2688BPL CSC2688 CSC2688BPL CSC2688G CSC2688O CSC2 |
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 200.000A Ic, 40 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 160 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 60 - 120 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 80 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 100 - 200 hFE.
|
Continental Device India Limited
|
| 30PHA20 |
SBD - 3A 200A Axial
|
NIEC[Nihon Inter Electronics Corporation]
|
| NF4000C-TT NF4100C-TT NF4050C-TT |
Large current(50 up to 200A)
|
Soshin
|
| PD2008 |
200A Avg 800 Volts
|
Nihon Inter Electronics Corporation
|
| PDT2018 PDH2018 |
THYRISTOR MODULE 200A / 800V
|
NIEC[Nihon Inter Electronics Corporation]
|
