| PART |
Description |
Maker |
| P4N60 |
Search --To SSP4N60
|
Fairchild Semiconductor
|
| SUP65P06-20 SUB65P06-20 |
From old datasheet system
P-Channel Enhancement-Mode Trans
P-Channel 60-V (D-S), 175C MOSFET
TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,65A I(D),TO-220AB
P-Channel MOSFET
30V N-Channel PowerTrench MOSFET
|
VISAY[Vishay Siliconix]
Vishay Intertechnology Inc
Vishay Intertechnology,Inc.
|
| HI4-0508A-8 |
16-Channel, 8-Channel, Differential 8-Channel and Differential 4-Channel, CMOS Analog MUXs with Active Overvoltage Protection; Temperature Range: -55°C to 125°C; Package: 20-LCC 8-CHANNEL, SGL ENDED MULTIPLEXER, CQCC20
|
Intersil, Corp.
|
| HI-506A07 HI3-0508A-5Z |
16-Channel, 8-Channel, Differential 8-Channel and Differential 4-Channel, CMOS Analog MUXs with Active Overvoltage Protection
|
Intersil Corporation
|
| HI3-0508-5Z |
Single 16 and 8/Differential 8-Channel and 4-Channel CMOS Analog Multiplexers 8-CHANNEL, SGL ENDED MULTIPLEXER, PDIP16
|
Intersil, Corp.
|
| FDS6990AS FDS6990AS_NL FDS6990ASNL |
Dual 30V N-Channel PowerTrench SyncFET 7500 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| DMN5L06VAK DMN5L06VK-7 |
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 280 mA, 50 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Diodes Inc.
Diodes, Inc.
|
| TD9944 TD9944TG |
Dual N-Channel Enhancement-Mode Vertical DMOS FETs 240 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA
|
Supertex, Inc.
SUTEX[Supertex, Inc]
|
| IXTL2X240N055T |
140 A, 55 V, 0.0044 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET ISOPLUS, I5PAC-5
N-Channel Enhancement Mode Avalanche Rated
|
IXYS Corporation
|
| SIZ710DT-T1-GE3 |
N-Channel 20 V (D-S) MOSFETs
16 A, 20 V, 0.0068 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 6 X 3.73 MM, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAIR, 6 PIN
|
Vishay Siliconix
Vishay Intertechnology, Inc.
|
| 2N7002T |
N-channel TrenchMOS FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.3 A; R<sub>DS(on)</sub>: 5000@10V5300@4.5V mOhm; V<sub>DS</sub>max: 60 V 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
|
NXP Semiconductors N.V.
|
|
