| PART |
Description |
Maker |
| ZVNL120G |
N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD VERTICAL DMOS FET
SOT223 N-CHANNEL ENHANCEMENT MODE
|
Zetex Semiconductors
Diodes Incorporated
|
| ARF450 |
RF POWER MOSFETs N- CHANNEL ENHANCEMENT MODE 150V 500W 120MHz
N-CHANNEL ENHANCEMENT MODE
|
ADPOW[Advanced Power Technology]
|
| STE36N50-DA |
N-CHANNEL ENHANCEMENT MODE POWERMOS TRANSISTORANDULTRA-FAST DIODEINISOTOPPACKAGE
N-Channel Enhancement Mode Power MOS Transistor and Ultra-Fast Diode in Isotop Package
|
STMicroelectronics
ST Microelectronics
|
| STB11NB40 5418 |
N-Channel Enhancement Mode PowerMESHTM MOSFET(N沟道增强模式MOSFET) N沟道增强模式PowerMESHTM MOSFET的（不适用沟道增强模式MOSFET的）
N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
From old datasheet system
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| STB9NB50 5376 |
N-Channel Enhancement Mode PowerMESHTM MOSFET(N沟道增强模式MOSFET)
N - CHANNEL ENHANCEMENT MODE Power MESH MOSFET
N - CHANNEL ENHANCEMENT MODE Power MESH] MOSFET
From old datasheet system
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| VN2410 VN2406 |
N-Channel Enhancement-Mode Vertical DMOS FET(击穿电压240V,10Ω，N沟道增强型垂直DMOS结构场效应管) N沟道增强型场效应管垂直的DMOS（击穿电40伏，10Ω沟道增强型垂直的DMOS结构场效应管
N-Channel Enhancement-Mode Vertical DMOS FET(?荤┛?靛?240V,10惟锛?娌??澧?己????茨MOS缁???烘?搴??)
N-Channel Enhancement-Mode Vertical DMOS FET(?荤┛?靛?240V,6惟锛?娌??澧?己????茨MOS缁???烘?搴??)
|
Elan Microelectronics, Corp.
ELAN Microelctronics Corp .
|
| STB7NB40 5362 |
N-Channel Enhancement Mode PowerMESHTM MOSFET(N沟道增强模式MOSFET)
N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
From old datasheet system
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| APM2317AC-TRL |
P-Channel Enhancement Mode MOSFET 4500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
P-Channel Enhancement Mode MOSFET P沟道增强型MOS
|
Anpec Electronics, Corp.
|
| BS250 70209 |
P-Channel Enhancement-Mode MOSFET Transistor(最小漏源击穿电45V，夹断电0.18A的P沟道增强型MOSFET晶体
From old datasheet system
P-Ch Enhancement-Mode MOSFET Transistors
|
Vishay Intertechnology,Inc.
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| STP40NE03L-20 5372 |
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZEPOWER MOSFET
N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE” POWER MOSFET
From old datasheet system
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
N - CHANNEL ENHANCEMENT MODE ?SINGLE FEATURE SIZE POWER MOSFET
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
