| PART |
Description |
Maker |
| STF15N65M5 STP15N65M5 STFI15N65M5 |
N-channel 650 V, 0.308 Ohm, 11 A MDmesh(TM) V Power MOSFET in I2PAKFP package
N-channel 650 V, 0.308 ohm typ., 11 A MDmesh V Power MOSFET
N-channel 650 V, 0.308 Ω typ., 11 A MDmesh V Power MOSFET in TO-220FP, I2PAKFP and TO-220 packages
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ST Microelectronics
STMicroelectronics
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| CS5394 |
117 dB, 48 kHz A/D Converter
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Cirrus Logic
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| LBN11802 |
117.6MHz SAW Filter 11MHz Bandwidth
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SIPAT Co,Ltd
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| EMK12H2H-25.117MTR |
CRYSTAL OSCILLATOR, CLOCK, 25.117 MHz, LVCMOS OUTPUT
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ECLIPTEK CORP
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| EMK11H2H-25.117MTR |
CRYSTAL OSCILLATOR, CLOCK, 25.117 MHz, LVCMOS OUTPUT
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ECLIPTEK CORP
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| EMK11G2H-25.117MTR |
CRYSTAL OSCILLATOR, CLOCK, 25.117 MHz, LVCMOS OUTPUT
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ECLIPTEK CORP
|
| 2N3442 ON0039 |
Hlgh -Power lndustrlal Translsrors
From old datasheet system
10 AMPERE POWER TRANSISTOR NPN SILICON 140 VOLTS 117 WATTS
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Motorola, Inc.
ON Semi
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| SI2304DS |
30 0.117 @ VGS = 10 V 0.190 @ VGS = 4.5 V
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TY Semiconductor Co., Ltd
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| 15KPJ45 15KPJ45A 15KPJ45C 15KPJ45CA 15KPJ58 15KPJ5 |
Glass passivated junction transient voltage suppressor. Vrwm = 210 V. Vbr(min/max) = 231/296.1 V @ It = 1.0 mA. Ir = 5 uA. Vc = 376 V @ Ipp = 40 A.
Glass passivated junction transient voltage suppressor. Vrwm = 190 V. Vbr(min/max) = 209/243.2 V @ It = 1.0 mA. Ir = 5 uA. Vc = 308 V @ Ipp = 49 A.
Glass passivated junction transient voltage suppressor. Vrwm = 220 V. Vbr(min/max) = 242/310.2 V @ It = 1.0 mA. Ir = 5 uA. Vc = 394 V @ Ipp = 38 A.
Glass passivated junction transient voltage suppressor. Vrwm = 110 V. Vbr(min/max) = 122/154.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 196 V @ Ipp = 77 A.
Glass passivated junction transient voltage suppressor. Vrwm = 160 V. Vbr(min/max) = 178/205.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 259 V @ Ipp = 58 A.
Glass passivated junction transient voltage suppressor. Vrwm = 160 V. Vbr(min/max) = 178/226.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 287 V @ Ipp = 52 A.
Glass passivated junction transient voltage suppressor. Vrwm = 130 V. Vbr(min/max) = 144/182.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 231 V @ Ipp = 65 A.
Glass passivated junction transient voltage suppressor. Vrwm = 120 V. Vbr(min/max) = 133/169.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 214 V @ Ipp = 70 A.
GLASS PASSIVATED JUNCTION TRANSIENT (VOLTAGE SUPPRESSOR VOLTAGE- 17 to 220 Volts 15000 Watt Peak Pulse Power) 玻璃钝化结瞬态（电压抑制电压20伏特175000脉冲峰值功率）
GLASS PASSIVATED JUNCTION TRANSIENT (VOLTAGE SUPPRESSOR VOLTAGE- 17 to 220 Volts 15000 Watt Peak Pulse Power) 玻璃钝化结瞬态（电压抑制电压20伏特75000脉冲峰值功率）
GLASS PASSIVATED JUNCTION TRANSIENT (VOLTAGE SUPPRESSOR VOLTAGE- 17 to 220 Volts 15000 Watt Peak Pulse Power) 玻璃钝化结瞬态（电压抑制电压220伏特75000脉冲峰值功率）
Glass passivated junction transient voltage suppressor. Vrwm = 120 V. Vbr(min/max) = 133/153.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 193 V @ Ipp = 78 A.
Glass passivated junction transient voltage suppressor. Vrwm = 130 V. Vbr(min/max) = 144/165.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 209 V @ Ipp = 72 A.
Glass passivated junction transient voltage suppressor. Vrwm = 170 V. Vbr(min/max) = 189/217.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 275 V @ Ipp = 55 A.
Glass passivated junction transient voltage suppressor. Vrwm = 110 V. Vbr(min/max) = 122/140.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 177 V @ Ipp = 85 A.
Glass passivated junction transient voltage suppressor. Vrwm = 170 V. Vbr(min/max) = 189/239.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 304 V @ Ipp = 49 A.
Glass passivated junction transient voltage suppressor. Vrwm = 190 V. Vbr(min/max) = 209/267.4 V @ It = 1.0 mA. Ir = 5 uA. Vc = 340 V @ Ipp = 44 A.
Glass passivated junction transient voltage suppressor. Vrwm = 210 V. Vbr(min/max) = 231/296.1 V @ It = 1.0 mA. Ir = 5 uA. Vc = 340 V @ Ipp = 44 A.
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Pan Jit International I...
PANJIT[Pan Jit International Inc.]
PanJit International Inc.
PanJit International, Inc.
|
| MI-J21-IA MI-J21-IZ MI-J21-MZ MI-J7N-IZ MI-J7N-MY |
RES,Wirewound,2KOhms,65WV,5 /-% Tol
GT 8C 8#16 SKT RECP WALL
RESISTOR SILICONE 12 OHM 10W
RESISTOR SILICONE 15 OHM 10W
XCR3032XL-10VQG44I
Flash 16Mb PROM (ST Micro),
Flash 32Mb PROM (ST Micro),
Bar Graph Display; Display Technology:LED; Package/Case:20-DIP; Color:High Efficiency Red; Forward Voltage:2.2V; Light Emitting Area:10 segments
Bar Graph Display; Display Technology:LED; Package/Case:20-DIP; Color:High Efficiency Red; Forward Voltage:2.0V; Light Emitting Area:10 segments
Gate / Inverter Logic IC; Logic Type:Dual 4-Input NOR Gate; Logic Family:4000; Logic Base Number:4002; Package/Case:14-DIP
BACKSHELL DB37 METALIZED PLASTIC
Replaced by PTN78000A,PTN04050C :
FLUKE-117 CALIBRATED BY NEWARK INONE SERVICES
HVAC Digital Multimeter and Infrared Thermometer Combo Kit; RoHS Compliant: NA
Bipolar Transistor; Collector Emitter Voltage, Vceo:800V; Transistor Polarity:NPN; Power Dissipation:70W; C-E Breakdown Voltage:1500V; DC Current Gain Min (hfe):5; Collector Current:8A; Package/Case:3-TO-3PML
RESISTOR WIREWOUND 390 OHM 10W
RF/Coaxial Connector; RF Coax Type:SMA; Contact Termination:Crimp; Body Style:Right Angle Plug; RG Cable Type:58, 58A, 58C, 141, 303, LMR195, Belden 7806A RoHS Compliant: Yes
RESISTOR WIREWOUND 35 OHM 10W
T-PNP-SI QUAD GEN PURPOSE
T-NPN-SI-QUAD GEN PURP
Amplifier, Other
Bipolar Transistor; Current Rating:150mA; Voltage Rating:24V
KPT 3C 3#20 SKT RECP
D-SI 70PRV .1A
Gate Logic IC; Logic Type:Gate; Logic Family:4000; Logic Base Number:4001; Package/Case:14-DIP; Number of Circuits:4; Mounting Type:Through Hole RoHS Compliant: Yes
Darlington Bipolar Transistor; Mounting Type:Through Hole; Package/Case:TO-3; Current Rating:12A; Voltage Rating:100V RoHS Compliant: Yes
Darlington Bipolar Transistor; Package/Case:TO-3; Mounting Type:Through Hole; Current Rating:12A; Voltage Rating:100V
Thyristor; Current Rating:8A; Mounting Type:Through Hole; Package/Case:TO-64; Current, It av:8A; Repetitive Reverse Voltage Max, Vrrm:400V; Voltage Rating:400V
Bipolar Transistor; Transistor Polarity:N Channel; C-E Breakdown Voltage:850V; DC Current Gain Min (hfe):5; Collector Current:15A; Package/Case:TO-3; Voltage Rating:450V
Small Signal Bipolar Transistor; Collector Emitter Voltage, Vceo:80V; Transistor Polarity:N Channel; Power Dissipation:0.8W; C-E Breakdown Voltage:80V; DC Current Gain Min (hfe):15; Collector Current:1A; Package/Case:TO-39
Bipolar Transistor; Transistor Polarity:PNP; Power Dissipation:5W; C-E Breakdown Voltage:320V; DC Current Gain Min (hfe):15; Collector Current:10A
IC; Package/Case:12-lead quad in-line
T-NPN-SI GEN PURP AMP
Bipolar Transistor; Collector Emitter Voltage, Vceo:24V; Transistor Polarity:PNP; C-E Breakdown Voltage:12V; DC Current Gain Min (hfe):110; Collector Current:100mA; Package/Case:TO-5; Current Rating:0.1A; Voltage Rating:24V
T-PNP- GE-AF PREAMP-DR-PO
RESISTOR WIREWOUND 5.6K OHM 3W
Bipolar Transistor; Current Rating:1.5A; Voltage Rating:50V
T-NPN-SI-AF DRIVER
; Transistor Polarity:N Channel; C-E Breakdown Voltage:140V; DC Current Gain Min (hfe):20; Collector Current:12A; Package/Case:TO-3P; DC Current Gain Max (hfe):200; Mounting Type:Through Hole
Single Digit Seven Segment Display; Number of Digits/Alpha:1; Digit/Alpha Height:7.62mm; Color:Red; Luminous Intensity (MSCP):500ucd
LED-DISPLAY-RED RoHS Compliant: Yes
Optoisolator; Collector Emitter Voltage, Vceo:30V; Transistor Polarity:NPN; Power Dissipation:250mW; C-E Breakdown Voltage:60V; DC Current Gain Min (hfe):50000; Collector Current:125mA; Package/Case:6-DIP
RF Bipolar Transistor; Collector Emitter Voltage, Vceo:1V; Transistor Polarity:N Channel; Power Dissipation:5W; DC Current Gain Min (hfe):25; Collector Current:400mA; DC Current Gain Max (hfe):200; Power (Ptot):5W
JFET; Transistor Polarity:N Channel; Breakdown Voltage, V(br)gss:-30V; Zero Gate Voltage Drain Current Min, Idss:5mA; Zero Gate Voltage Drain Current Max, Idss:15mA; Gate-Source Cutoff Voltage Max, Vgs(off):-6V; Package/Case:TO-92
Optocoupler; Optocoupler Output Type:Transistor; Isolation Voltage:1500Vrms; Package/Case:6-DIP; Mounting Type:Through Hole; C-E Breakdown Voltage:30V; DC Current Gain Min (hfe):50; Transistor Polarity:NPN
OPTOISOLATOR/DARL
NPN-Output dc-Input Optocoupler,1-CHANNEL,3.5kV ISOLATION,DIP
Optocoupler; Optocoupler Output Type:Transistor; Isolation Voltage:7500Vrms; Package/Case:6-DIP; Collector Current:0.05A; Mounting Type:Through Hole; Voltage Rating:30V; Transistor Polarity:NPN
Optocoupler; Optocoupler Output Type:Transistor; Isolation Voltage:7500Vrms; Package/Case:6-DIP; Collector Current:0.5A; Mounting Type:Through Hole; C-E Breakdown Voltage:80V; DC Current Gain Max (hfe):3.5; Transistor Polarity:NPN
Replaced by PTN04050C :
Bipolar Transistor; Package/Case:TO-3P; Current Rating:10A; Voltage Rating:800V
T-NPN-SI W/ 10K RESISTOR
T-NPN-SI COLOR TV OUTPUT
TVS UNI-DIR 64V 1500W SMC
RF Bipolar Transistor; Collector Emitter Voltage, Vceo:300mV; Power Dissipation, Pd:0.3W; DC Current Gain Min (hfe):350; C-E Breakdown Voltage:120V; Collector Current:100mA; DC Current Gain Max (hfe):700; Power (Ptot):300mW RoHS Compliant: Yes
Bipolar Transistor; Collector Emitter Voltage, Vceo:80V; Transistor Polarity:NPN; Power Dissipation:800mW; C-E Breakdown Voltage:80V; DC Current Gain Min (hfe):1000; Collector Current:1A; Package/Case:3-TO-92
T-NPN-SI HI SPEED SWITCH
T-NPN SI- HI VLTG/SPEED
Bipolar Transistor; Package/Case:TO-3P; Current Rating:6A; Voltage Rating:800V
Bipolar Transistor; Current Rating:12A; Voltage Rating:400V
Bipolar Transistor; Collector Emitter Voltage, Vceo:450V; Transistor Polarity:NPN; Power Dissipation:150W; DC Current Gain Min (hfe):10; Collector Current:15A; Package/Case:3-TO-218; Terminal Type:3; Current Rating:15A
Bipolar Transistor; Collector Emitter Voltage, Vceo:450V; Transistor Polarity:NPN; Power Dissipation:125W; Collector Current:8A; Package/Case:3-TO-218; Terminal Type:3; Current Rating:8A; Number of Cross References:81
SRAM Memory IC; Memory Type:MOS SRAM; Access Time, Tacc:55ns; Memory Configuration:4K x 1
Bipolar Transistor; Current Rating:4A; Voltage Rating:80V
milirtary DC-CD Converters 10 to 50W
TVS BIDIRECT 1500W 64V SMC
TVS UNIDIRECT 1500W 7.0V SMC
Military DC-DC Converters 10 to 50W 军事的DC - DC转换00W
CAP/ 27P 3K K CF X9S 军事的DC - DC转换00W
Military DC-DC Converters 10 to 50W 军事的DC - DC转换100W
Military DC-DC Converters 10 to 50W 军事的DC - DC转换1050W
IC; Mounting Type:Through Hole; Package/Case:9-SIP 军事的DC - DC转换00W
Military DC-DC Converters 10 to 50W 军事DC - DC转换00W
32 MCELL 3 VOLT ZERO POWER ISP CPLD - NOT RECOMMENDED for NEW DESIGN 军事的DC - DC转换00W
CONNECTOR ACCESSORY 军事的DC - DC转换00W
FLUKE-116 CALIBRATED BY NEWARK INONE SERVICES RoHS Compliant: NA 军事的DC - DC转换00W
Flash 16Mb PROM (ST Micro) 军事的DC - DC转换00W
Bipolar Transistor; Collector Emitter Voltage, Vceo:30V; Power Dissipation, Pd:625mW; DC Current Gain Min (hfe):50; C-E Breakdown Voltage:30V; Collector Current:300mA; DC Current Gain Max (hfe):800; Power (Ptot):750mW 军事的DC - DC转换00W
GT 8C 8#16 PIN RECP WALL 军事的DC - DC转换00W
Gate Logic IC; Logic Type:Gate; Logic Family:4000; Logic Base Number:4011; Package/Case:14-DIP; Number of Circuits:4; Mounting Type:Through Hole 军事的DC - DC转换00W
SCR Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):10A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:8mA 军事的DC - DC转换00W
Thyristor; Current Rating:10A; Mounting Type:Through Hole; Package/Case:TO-220; Current, It av:10A; Repetitive Reverse Voltage Max, Vrrm:600V; Voltage Rating:600V RoHS Compliant: Yes 军事的DC - DC转换00W
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VICOR[Vicor Corporation]
DC/DC变换
Vicor, Corp.
Analog Devices, Inc.
Maxim Integrated Products, Inc.
|
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