| PART |
Description |
Maker |
| 106501-2000 106501-1000 106501-0019 106501-0026 10 |
Sealed SFP Assemblies Integrated Optical and Electrical Receptacles
|
Molex Electronics Ltd.
|
| AN649 |
HFTA-04.0: Optical/Electrical Conversion in SDH/SONET Fiber Optic Systems
|
MAXIM - Dallas Semiconductor
|
| TX1.25GBIT/S |
Parallel Optical Links (PAROLI) - PAROLI?2 Tx AC, 1.25 Gbit/s, multistandard electrical interface
|
Infineon
|
| Q62702-G0042 BGA312 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| KT837L15 KT837W15 KT837L55 KT837L51 KT837W51 KT837 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter C lead spacing .220 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches.
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter C lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches.
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter C lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches.
Slotted optical switch phototransistor output. Opaque polysulfone discrete shells. Electrical parameter A lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .010 inches.
Slotted optical switch phototransistor output. Opaque polysulfone discrete shells. Electrical parameter C lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches.
Slotted optical switch phototransistor output. Opaque polysulfone discrete shells. Electrical parameter C lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches.
Slotted optical switch phototransistor output. Opaque polysulfone discrete shells. Electrical parameter A lead spacing .220 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .010 inches.
Slotted optical switch phototransistor output. Opaque polysulfone discrete shells. Electrical parameter A lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches.
Slotted optical switch phototransistor output. Opaque polysulfone discrete shells. Electrical parameter A lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches.
Slotted optical switch phototransistor output. Opaque polysulfone discrete shells. Electrical parameter A lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches.
Slotted optical switch phototransistor output. Opaque polysulfone discrete shells. Electrical parameter A lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches.
Slotted optical switch phototransistor output. Opaque polysulfone discrete shells. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches.
Slotted optical switch phototransistor output. Opaque polysulfone discrete shells. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches.
Slotted optical switch phototransistor output. Opaque polysulfone discrete shells. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches.
Slotted optical switch phototransistor output. Opaque polysulfone discrete shells. Electrical parameter A lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches.
Slotted optical switch phototransistor output. Opaque polysulfone discrete shells. Electrical parameter B lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches.
Slotted optical switch phototransistor output. Opaque polysulfone discrete shells. Electrical parameter C lead spacing .220 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches.
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter A lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches.
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter A lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches.
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter A lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .010 inches.
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells . Electrical parameter A lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches.
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches.
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter A lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches.
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches.
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches.
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter C lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches.
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter C lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches.
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter C lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches.
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter A lead spacing .220 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .010 inches.
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter A lead spacing .220 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches.
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter A lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches.
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter A lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches.
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter B lead spacing .220 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches.
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter B lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches.
Slotted optical switch phototransistor output. Opaque polysulfone discrete shells. Electrical parameter C lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches.
Slotted optical switch phototransistor output. Opaque polysulfone discrete shells. Electrical parameter C lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches.
Slotted optical switch phototransistor output. Opaque polysulfone discrete shells. Electrical parameter B lead spacing .220 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches.
|
Optek Technology
|
| MCP6041 MCP6043 MCP6044 MCP6042 MCP6044T MCP6041T |
The MCP6041 operational amplifier (op amp) has a gain bandwidth product of 14 kHz with a low typical operating current of 600 nA ...
The MCP6044 quad operational amplifier (op amp) has a gain bandwidth product of 14 kHz with a low typical operating current of 600 ...
The MCP6043 operational amplifier (op amp) has a gain bandwidth product of 14 kHz with a low typical operating current of 600 nA ...
The MCP6042 dual operational amplifier (op amp) has a gain bandwidth product of 14 kHz with a low typical operating current of 600 ...
600 nA, Rail-to-Rail Input/Output Op Amps
|
MICROCHIP[Microchip Technology]
|
| FMCE-0528 FMCE-0528-TR |
Attenuation to 60 dB at 500 kHz, typical Operating temperature -55掳 to 125掳C
Attenuation to 60 dB at 500 kHz, typical Operating temperature -55° to 125°C
|
Interpoint Corporation Company
|
| MPX2100 MPX2100A MPX2100DP MPX2100GVP MPX2100AS MP |
0 to 100 kPa (0 to 14.5 psi) 40 mV FULL SCALE SPAN (TYPICAL) 000千帕4.5 PSI）的全尺寸为40 mV跨度（典型）
(MPX2100 / MPX2101) 0 to 100 kPa (0 to 14.5 psi) 40 mV FULL SCALE SPAN (TYPICAL)
Sensor
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| TOAD347-RXC TOAD347-RXB |
Telecommunication IC 通信集成电路
OPTICAL COMMUNICATION DEVICES 2.5GB/S OPTICAL RECEIVER
|
Electronic Theatre Controls, Inc.
Toshiba Semiconductor
|
| MCP619-I/P MCP619-I/SL MCP619-I/ST MCP617-I/MS MCP |
The MCP619 quad operational amplifier (op amp) has a gain bandwidth product of 190 kHz with a low typical operating current of 19 ...
The MCP617 dual operational amplifier (op amp) has a gain bandwidth product of 190 kHz with a low typical operating current of 19 ...
The MCP618 operational amplifier (op amp) has a gain bandwidth product of 190 kHz with a low typical operating current of 19 µA ...
The MCP616 operational amplifier (op amp) has a gain bandwidth product of 190 kHz with a low typical operating current of 19 µA ...
|
Microchip
|
| MCP6547 MCP6549 MCP6546 MCP6548 MCP6547-I/MS MCP65 |
The MCP6549 is an Open Drain, quad comparator. This single-ended device operates from 1.6V to 5.5V, with typical quiescent current of 600 nA and a maximum of 1 microamp and is 10V output capable. This device is offered in the sixteen lead
The MCP6546 is an Open-Drain, single comparator. This single-ended device operates from 1.6V to 5.5V, with typical quiescent current ...
The MCP6549 is an Open Drain, quad comparator. This single-ended device operates from 1.6V to 5.5V, with typical quiescent current ...
The MCP6547 is an Open Drain, dual comparator. This single-ended device operates from 1.6V to 5.5V, with typical quiescent current of 600 nA and a maximum of 1 microamp and is 10V output capable. This device is offered in the eight lead PD
The MCP6546 is an Open-Drain, single comparator. This single-ended device operates from 1.6V to 5.5V, with typical quiescent current of 600 nA and a maximum of 1 microamp and is 10V output capable. This device is offered in the eight lead
The MCP6548 is an Open Drain, single comparator. This single-ended device operates from 1.6V to 5.5V, with typical quiescent current ...
The MCP6547 is an Open Drain, dual comparator. This single-ended device operates from 1.6V to 5.5V, with typical quiescent current ...
OPEN-DRAIN OUTPUT SUB-MICROAMP COMPARATORS
|
MICROCHIP[Microchip Technology]
|
