| PART |
Description |
Maker |
| XDUG12C |
Material (Color) = Gap (Green) Lens = Peak Wave Length = 565 Iv(ucd) If@10mA Min.= 3000 Iv(ucd) If@10mA Typ.= 10490
|
SunLED Company Limited
|
| XDUG09A |
Material (Color) = Gap (Green) Lens = Peak Wave Length = 565 Iv(ucd) If@10mA Min.= 800 Iv(ucd) If@10mA Typ.= 1890
|
SunLED Company Limited
|
| LA2351-42BEWRN |
Emitting Color: Red Material: Gap Wavelength(nm): 700
|
Ledtech Electronics Corp.
|
| BM-10EG57ND |
hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate.
5X7 DOT MATRIX DISPLAY, HIGH EFFICIENCY RED/YELLOW GREEN, 30.48 mm
|
BRIGHT LED ELECTRONICS CORP
AMERICAN BRIGHT OPTOELECTRONICS CORP
|
| BR-B21V1-12V |
GaP/GaP Green Internal For DC and pulse operation. Resistor 800Ω
GaP/GaP Green Internal For DC and pulse operation. Resistor 800ヘ
|
BRIGHT LED ELECTRONICS CORP
|
| BL-B2324 |
LED GaP/GaP Green Low current requirement High efficiency.
|
BRIGHT LED ELECTRONICS CORP
|
| BL-B2337M |
LED GaP/GaP Green Low current requirement High efficiency.
|
BRIGHT LED ELECTRONICS CORP
|
| BL-B2424 |
LED GaP/GaP Green Low current requirement High efficiency.
|
BRIGHT LED ELECTRONICS CORP
|
| BL-BX1141-L |
LED GaP/GaP Hi-Eff Green Low current requirement.
|
BRIGHT LED ELECTRONICS CORP
|
| BL-BX13V1F |
LED GaP/GaP Hi-Eff Green Low current requirement.
|
BRIGHT LED ELECTRONICS CORP
|
| BA-3G12UW |
green chips, which are made from GaP on GaP substrate. 绿色芯片，是由磷化镓基板作出
|
Bright LED Electronics, Corp.
Bright LED Electronics Corp.
|
