| PART |
Description |
Maker |
| AM29LV400B-100WAC |
EEPROM,FLASH,256KX16/512KX8,CMOS,BGA,48PIN,PLASTIC
From old datasheet system
|
AMD Inc
|
| KM684000LI KM684000LI-10 KM684000LI-10L KM684000LI |
512Kx8 bit CMOS static RAM, 85ns, low power
Quadruple Bilateral Analog Switch 14-TSSOP -40 to 85 524288亩字× 8位高速CMOS静态RAM
524,288K WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 524288亩字× 8位高速CMOS静态RAM
RES 1.6K-OHM 1% 0.063W 200PPM THK-FILM SMD-0603 TR-7-PA
512Kx8 bit CMOS static RAM, 100ns, low power
512Kx8 bit CMOS static RAM, 70ns, low power
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| FM25C160 FM25C160U FM25C160UE FM25C160UV FM25C160U |
SERIAL EEPROM|2KX8|CMOS|DIP|8PIN|PLASTIC 2K X 8 SPI BUS SERIAL EEPROM, PDIP8
16K-Bit SPI?/a> Interface Serial CMOS EEPROM
From old datasheet system
16K-Bit SPI Interface Serial CMOS EEPROM
16K-Bit SPI⑩ Interface Serial CMOS EEPROM
|
Fairchild Semiconductor, Corp.
http://
FAIRCHILD[Fairchild Semiconductor]
|
| EDI88512LPXCB EDI88512LPXCC EDI88512LPXCI EDI88512 |
512Kx8 Monolithic SRAM, CMOS
|
WEDC[White Electronic Designs Corporation]
|
| HT27C040 |
CMOS 512Kx8-Bit OTP EPROM
|
holtek
|
| MX29F004T MX29F004TPC-12 |
4M-BIT [512KX8] CMOS FLASH MEMORY
|
Macronix International
|
| 29F004T-55 29F004T-70 29F004T-90 MX29F004TQC-12G M |
4M-BIT [512KX8] CMOS FLASH MEMORY
|
Macronix International Co., Ltd.
|
| KM684000A |
512Kx8 bit Low Power CMOS Static RAM(512K x 8浣?????CMOS ???RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HY628400 |
IC,SRAM,512KX8,CMOS,DIP,32PIN,PLASTIC
|
Hynix
|
| MX29F040TC-55 MX29F040TC-12 MX29F040QC-90 MX29F040 |
4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY
|
MCNIX[Macronix International]
|
| 93LC46-I/P 93LC66-I/SN 93LC66I/P 93LC66I/SN |
SERIAL EEPROM|128X8/64X16|CMOS|DIP|8PIN|PLASTIC
SERIAL EEPROM|512X8/256X16|CMOS|SOP|8PIN|PLASTIC
1K/2K/4K 2.5 V Serial EEPROM(397.55 k) 1K/2K/4K 2.5伏串行EEPROM97.55十一
|
Linx Technologies, Inc.
|
