| PART |
Description |
Maker |
| W29F102P-50 W29F102P-50B W29F102Q-45 W29F102Q-45B |
64K 16 CMOS FLASH MEMORY
64K 16 CMOS FLASH MEMORY 64K X 16 FLASH 5V PROM, 70 ns, PQCC44
64K 16 CMOS FLASH MEMORY 64K X 16 FLASH 5V PROM, 55 ns, PQCC44
64K 16 CMOS FLASH MEMORY 64K X 16 FLASH 5V PROM, 50 ns, PDSO40
64K 16 CMOS FLASH MEMORY 64K X 16 FLASH 5V PROM, 70 ns, PDSO40
|
Winbond Electronics Corp
Winbond Electronics, Corp.
|
| W29N102C |
64K×16bit CMOS 3.3V Flash Memory(64K×16位以3.3V电源供电的CMOS闪速存储器)
|
Winbond Electronics Corp
|
| W49L102Q-55 W49L102Q-55B W49L102Q-70 W49L102Q-70B |
64K X 16 CMOS 3.3V FLASH MEMORY
|
WINBOND[Winbond]
|
| W29EE512 W29EE512P-12 W29EE512P-12B W29EE512P-70 W |
64K X 8 CMOS FLASH MEMORY
|
Winbond
|
| AN28F512 AN28F512-120 AN28F512-150 |
512K (64K x 8) CMOS FLASH MEMORY
|
Intel Corporation
|
| AN28F512-120 |
512K (64K x 8) CMOS FLASH MEMORY
|
Intel Corp.
|
| AT29LV512 AT29LV512-15JC AT29LV512-15JI AT29LV512- |
512K 64K x 8 3-volt Only CMOS Flash Memory
|
ATMEL[ATMEL Corporation]
|
| AT29C512-12 AT29C512-12JC AT29C512-12JI AT29C512-1 |
512K 64K x 8 5-volt Only CMOS Flash Memory
|
ATMEL Corporation
|
| AT49F1025 AT49F1025-45JC AT49F1025-45VC AT49F1025- |
Dual Positive-Edge-Triggered D-Type Flip-Flops 14-TVSOP -40 to 85
1-Megabit 64K x 16 5-volt Only Flash Memory 64K X 16 FLASH 5V PROM, 70 ns, PQCC44
Dual Positive-Edge-Triggered D-Type Flip-Flops 14-TSSOP -40 to 85 64K X 16 FLASH 5V PROM, 45 ns, PQCC44
1-Megabit 64K x 16 5-volt Only Flash Memory 64K X 16 FLASH 5V PROM, 45 ns, PDSO40
1-Megabit 64K x 16 5-volt Only Flash Memory 64K X 16 FLASH 5V PROM, 55 ns, PDSO40
Dual Positive-Edge-Triggered D-Type Flip-Flops 14-TSSOP -40 to 85 64K X 16 FLASH 5V PROM, 55 ns, PDSO40
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| A2927SEB 2927 A29512 |
64K X 8 Bit CMOS 5.0 Volt-only/ Uniform Sector Flash Memory
DUAL FULL-BRIDGE PWM MOTOR DRIVER 双全桥PWM电机驱动
|
AMIC Technology
Allegro MicroSystems, Inc.
ALLEGRO[Allegro MicroSystems]
|
| AM28F010A AM28F010A-120EC AM28F010A-120ECB AM28F01 |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms
0.5MM, ZIF, SMT, 42 POSITION, EMBOSS TAPE T&R RoHS Compliant: Yes
CAP 100PF 1500V 20% NP0(C0G) SMD-1808 TR-13 PLATED-NI/SN
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位28亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 200 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 120 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 90 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 150 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PDSO32
|
Advanced Micro Devices, Inc.
SPANSION LLC
ADVANCED MICRO DEVICES INC
|
