| PART |
Description |
Maker |
| HYB3117400BJ-50 HYB3117400BJ-60 HYB3117400BJ-70 HY |
4M x 4 Bit FPM DRAM 3.3 V 4k 50 ns
4M x 4 Bit FPM DRAM 3.3 V 4k 60 ns
-3.3V 4M x 4-Bit Dynamic RAM
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| MT4LC1M16C3TG-6S MT4LC1M16C3DJ-6S |
FPM DRAM 快速页面模式的DRAM
|
Micron Technology, Inc.
|
| AS4C4M4 |
16M FPM DRAM
|
Austin Semiconductor
|
| TCS59SM716AFTL-80 TCS59SM716AFTL-70 TCS59SM716AFTL |
2M×4Banks×16Bits Synchronous DRAM(4M×16位同步动态RAM)
8M×4Banks×4Bits Synchronous DRAM(4M×4位同步动态RAM)
4M×4Banks×8Bits Synchronous DRAM(4M×8位同步动态RAM) 4米4Banks × 8位同步DRAM米8位同步动态RAM）的
8M?4Banks?4Bits Synchronous DRAM(4缁?M?4浣??姝ュ???AM)
SYNCHRONOUS DRAM, PDSO54
|
Toshiba Corporation
Toshiba, Corp.
|
| IC41C16105 IC41LV16105 IC41LV16105-60TI IC41C16105 |
1M X 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE 100万166兆）动态RAM的快速页面模
DYNAMIC RAM, FPM DRAM
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
ICSI
ETC[ETC]
Integrated Circuit Solution Inc
|
| IC41C82052S IC41LV82052S IC41C82052S-50J IC41C8205 |
DYNAMIC RAM, FPM DRAM
2M x 8 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
|
ICSI[Integrated Circuit Solution Inc]
|
| 42S16800A IS42S81600A IS42S16800A IS42S32400A IS42 |
16Meg x 8/ 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
CABLE ASSEMBLY; BNC MALE TO BNC FEMALE BULKHEAD; 50 OHM, RG174A/U COAX; ; *USES STANDARD 50 OHM INTERFACE CONNECTORS* 4M X 32 SYNCHRONOUS DRAM, 7 ns, PDSO86
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 16M X 8 SYNCHRONOUS DRAM, 7 ns, PDSO54
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PDSO86
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 4M X 32 SYNCHRONOUS DRAM, 7 ns, PDSO86
|
Integrated Silicon Solution Inc
Integrated Silicon Solution, Inc.
|
| GM71V17400CT-6 GM71V17400CCL |
x4 Fast Page Mode DRAM
4Mx4|3.3V|2K|5/6/7|FP/EDO DRAM - 16M
|
|
| HYM72V1645GU-60 HYM72V1645GU-50 HYM64V1645GU-60 HY |
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 3.3 16米x 64位江户内.3V6米x 72位江户记忆体模组
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 72 EDO DRAM MODULE, 60 ns, DMA168
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 64 EDO DRAM MODULE, 60 ns, DMA168
16M x 64 Bit DRAM Module unbuffered
16M x 72 Bit ECC DRAM Module unbuffered
|
SIEMENS A G
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| K4S280832C K4S280832C-TC_L75 K4S280832C-TC_L1H K4S |
16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
4MB x 8Bit x 4 Banks Synchronous DRAM Data Sheet
128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| MT4C4001JCZ-10_883C MT4C4001JCZ-10_IT MT4C4001JCZ- |
1 MEG x 4 DRAM Fast Page Mode DRAM
|
AUSTIN[Austin Semiconductor]
|
