| PART |
Description |
Maker |
| 2N6255 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
Microsemi
|
| MRF8372 MRF8372G |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
Advanced Power Technology
|
| MRF4427 MRF4427R1 MRF4427R2 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
Advanced Power Technology
|
| MS1251 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
Advanced Power Technology
|
| MRF3866GR2 MRF3866GR1 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
Advanced Power Technology
|
| MRF914 MSC1325 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
From old datasheet system
|
Microsemi Corporation
|
| MRF1001 MRF1001A MSC1311 |
From old datasheet system
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
MICROSEMI[Microsemi Corporation]
|
| MRF5812 MRF5812R1 MRF5812R2 MRF5812R1R2 MSC1319 |
From old datasheet system
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
MICROSEMI[Microsemi Corporation]
|
| MRF607 MSC1322 |
From old datasheet system
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
MICROSEMI[Microsemi Corporation]
|
| 2SC5195 2SC5195-T1 2SC5195NE68819 |
Discrete
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 微波低噪声放大器NPN硅外延晶体管
|
NEC Corp.
NEC, Corp.
|
