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KE924505 - Transistor Module

KE924505_151742.PDF Datasheet


Part No.	KE924505
Description	Transistor Module
File Size	377.55K / 4 Page
Maker	Powerex
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FZ800R33KF1 FS150R12KF4 FD400R12KF4	TRANSISTOR \| IGBT POWER MODULE \| INDEPENDENT \| 3.3KV V(BR)CES \| 800A I(C) TRANSISTOR \| IGBT POWER MODULE \| 3-PH BRIDGE \| 1.2KV V(BR)CES \| 150A I(C) TRANSISTOR \| IGBT POWER MODULE \| INDEPENDENT \| 1.2KV V(BR)CES \| 400A I(C) 晶体管\| IGBT功率模块\|独立\| 1.2KV五（巴西）国际消费电子展\|四楼一（c	Infineon Technologies AG
1DI300MN-050	TRANSISTOR \| BJT POWER MODULE \| DARLINGTON \| 600V V(BR)CEO \| 300A I(C) Power Transistor Module	Fuji Electric
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OM6414SP3 OM6415SP3 OM6413SP3 OM6416SP3	TRANSISTOR \| MOSFET POWER MODULE \| 3-PH BRIDGE \| 200V V(BR)DSS \| 4A I(D) 晶体管\| MOSFET功率模块\| 3 - PH值大桥\| 200伏五（巴西）直\| 4A条（丁） TRANSISTOR \| MOSFET POWER MODULE \| 3-PH BRIDGE \| 400V V(BR)DSS \| 2.5A I(D) 晶体管\| MOSFET功率模块\| 3 - PH值大桥\| 400V五（巴西）直\| 2.5AI（四 TRANSISTOR \| MOSFET POWER MODULE \| 3-PH BRIDGE \| 100V V(BR)DSS \| 6A I(D) 晶体管\| MOSFET功率模块\| 3 - PH值大桥\| 100V的五（巴西）直\| 6A条（丁） TRANSISTOR \| MOSFET POWER MODULE \| 3-PH BRIDGE \| 500V V(BR)DSS \| 2A I(D) 晶体管\| MOSFET功率模块\| 3 - PH值大桥\| 500V五（巴西）直\|甲（丁）	Samwha Electronics International Rectifier, Corp.
QCA75AA120	TRANSISTOR MODULE From old datasheet system Transistors Module	SANREX[SanRex Corporation]
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FF75R10KN FF150R10KN FF100R10KN FS50R10KF2 FS8R06K	TRANSISTOR \| IGBT \| N-CHAN \| DUAL \| 1KV V(BR)CES \| 75A I(C) \| M:HL093HD5.6 TRANSISTOR \| IGBT \| N-CHAN \| DUAL \| 1KV V(BR)CES \| 150A I(C) \| M:HL093HW048 TRANSISTOR \| IGBT \| N-CHAN \| DUAL \| 1KV V(BR)CES \| 100A I(C) \| M:HL093HW048 TRANSISTOR \| IGBT POWER MODULE \| 3-PH BRIDGE \| 1KV V(BR)CES \| 50A I(C) TRANSISTOR \| IGBT POWER MODULE \| 3-PH BRIDGE \| 600V V(BR)CES \| 8A I(C) 晶体管\| IGBT功率模块\| 3 - PH值大桥\| 600V的五（巴西）国际消费电子展\| 8A条一（c TRANSISTOR \| IGBT \| N-CHAN \| DUAL \| 1KV V(BR)CES \| 15A I(C) \| M:HL080HD5.3 晶体管\| IGBT的\|正陈\|双\| 1KV交五（巴西）国际消费电子展\|5A一（c）\|米：HL080HD5.3 TRANSISTOR \| IGBT POWER MODULE \| 3-PH BRIDGE \| 600V V(BR)CES \| 75A I(C) 晶体管\| IGBT功率模块\| 3 - PH值大桥\| 600V的五（巴西）国际消费电子展\| 75A条一（c	Delta Electronics, Inc. Fuji Electric Holdings Co., Ltd. Infineon Technologies AG
TLP28107 TLP281 TLP281-4 TLP281Y-TPF TLP281GR-TPF	1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR PROGRAMMABLE CONTROLLERS AC/DC-INPUT MODULE PC CARD MODEM(PCMCIA)	Toshiba Semiconductor Toshiba Corporation
1792D-16BT0LP 1792D-4B0LP 1792D-2B2LP 1792D-4BT4LP	MODULE 16 OUT MODULE 4 IN 模块4中的 MODULE 4 IN/4 OUT 模块4输入/ 4输出 MODULE 16 IN 模块16 MODULE 2 IN/2 OUT 模块2输入/ 2输出	NXP Semiconductors N.V. Stackpole Electronics, Inc.
X9315 X9315WSZ-2.7 X9315TM X9315TM-2.7 X9315TMI X9	:SEMITOP 3; Centres, fixing:52.5mm; Current, Ic av:40A; Current, Ic continuous b max:32A; RoHS Compliant: Yes max:2.1V; Case style:SEMITOP 4; Current, Icm pulsed:100A; Temperature, Tj RoHS Compliant: Yes THYRISTOR MODULE, 3 PHASETHYRISTOR MODULE, 3 PHASE; Voltage, Vrrm:1600V; Case style:SEMITOP 3; Current, It rms:68A; Current, Itsm:450A; Voltage, Vgt :SEMITOP-4; Voltage, Vceo:1200V; Voltage, Vce sat max:2.15V; Current, Ic continuous a continuous a max:17A; Voltage, Vce sat max:2.5V; Case style:SEMITOP 3; Current, Icm RoHS Compliant: Yes IGBT MODULE, H BRIDGE 1200VIGBT MODULE, H BRIDGE 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3.2V IGBT MODULE, DUAL 600V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:54A IGBT MODULE, CHOPPER 1200VIGBT MODULE, CHOPPER 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V IGBT MODULE 6 PACK 114A 1200V TRENCHIGBT MODULE 6 PACK 114A 1200V TRENCH; Transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Voltage :SEMITOP 2; Centres, fixing:38mm; Current, Ic av:23A; Current, Ic continuous b max:15A; RoHS Compliant: Yes IGBT MODULE, 6 PACK 1200VIGBT MODULE, 6 PACK 1200V; Transistor type:IGBT; Case style:SEMITOP 3; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V IGBT MODULE, DUAL 1200VIGBT MODULE, DUAL 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V; Current, Ic MOSFET MODULE, 6 PACK 75VMOSFET MODULE, 6 PACK 75V; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:100V; Case style:SEMITOP 2 RECTIFIER SCHOTTKY SINGLE 1A 70V 25A-ifsm 0.8V-vf 0.5mA-ir DO-41 5K/AMMO DIODE SCHOTTKY SINGLE 10V 150mW 0.37V-vf 30mA-IFM 1mA-IF 1uA-IR SOT-523 3K/REEL IGBT MODULE, DUAL 600V; Transistor type:IGBT; Case style:SEMITOP 1; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:30A; Current, Icm pulsed:24A; Power, Pd:1400W; Time, rise:35ns; Centres, fixing:28.5mm; Low Noise, Low Power, 32 Taps 10K DIGITAL POTENTIOMETER, INCREMENT/DECREMENT CONTROL INTERFACE, 32 POSITIONS, PDIP8 IGBT MODULE 6 PACK 96A 600V TRENCHIGBT MODULE 6 PACK 96A 600V TRENCH; Transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Current, Ic continuous a max:100A IGBT MODULE, 6 PACK 1200VIGBT MODULE, 6 PACK 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V; Current, Ic continuous a max:22A; Current, Icm pulsed:44A; Power, Pd:1600W; Time,	http:// INTERSIL[Intersil Corporation] Intersil, Corp.
TLP124 TLP124BV	IRed & photo−transistor, for programmable controllers, AC / DC−input module and telecommunication Photocoupler GaAs Ired & Photo .Transistor Office Machine Programmable Controllers AC / DC.Input Module Telecommunication	Toshiba Semiconductor http://
KE92450310	Transistor Module	Powerex

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