| PART |
Description |
Maker |
| AS8E128K32P-200/883C AS8E128K32Q-250/883C AS8E128K |
128K x 32 EEPROM Memory Array
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http://
Austin Semiconductor
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| AS8E128K32Q-15IT |
128K x 32 EEPROM radiation tolerant memory array
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Austin Semiconductor
|
| AS8F512K32Q-90/CT AS8F512K32Q-90/IT AS8F512K32Q-90 |
128K x 32 SRAM SRAM MEMORY ARRAY 128K X 32 MULTI DEVICE SRAM MODULE, 15 ns, CPGA66
128K x 32 SRAM SRAM MEMORY ARRAY 128K X 32 MULTI DEVICE SRAM MODULE, 15 ns, CQFP68
128K x 32 SRAM SRAM MEMORY ARRAY 128K X 32 MULTI DEVICE SRAM MODULE, 35 ns, CQFP68
512K x 32 FLASH FLASH MEMORY ARRAY 512K X 32 FLASH 5V PROM MODULE, 90 ns, CQFP68
512K x 32 FLASH FLASH MEMORY ARRAY 512K X 32 FLASH 5V PROM MODULE, 120 ns, CQFP68
128K x 32 SRAM SRAM MEMORY ARRAY 128K X 32 MULTI DEVICE SRAM MODULE, 17 ns, CQFP68
128K x 32 SRAM SRAM MEMORY ARRAY 128K X 32 MULTI DEVICE SRAM MODULE, 20 ns, CQFP68
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Austin Semiconductor, Inc
|
| 28LV010RPDE-25 28LV010RT1DE-25 28LV010RT2DE-25 28L |
3.3V 1 Megabit (128K x 8-Bit) EEPROM
3.3V 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 3V, 200 ns, DFP32
3.3V 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 3V, 200 ns, DIP32
3.3V 1 Megabit (128K x 8-Bit) EEPROM 3.3V兆位28K的8位）的EEPROM
CAP-ARR 200PF X4 100V 10% NP0(C0G) SMD-0508 PLATED-NI/SN TR-7 1K/REEL
CAP ARRAY, 2 X 10NF 50V 0508X7RCAP ARRAY, 2 X 10NF 50V 0508X7R; Capacitance:10nF; Voltage rating, DC:50V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W2A; Tolerance, :10%; Tolerance, -:10%; Temp, op. max:125(degree C);
CAP ARRAY, 2 X 22NF 16V 0405X5RCAP ARRAY, 2 X 22NF 16V 0405X5R; Capacitance:22nF; Voltage rating, DC:16V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W1A; Tolerance, :20%; Tolerance, -:20%; Temp, op. max:85(degree C);
CAP ARRAY, 2 X 15PF 50V 0405NPOCAP ARRAY, 2 X 15PF 50V 0405NPO; Capacitance:0.015nF; Voltage rating, DC:50V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W1A; Tolerance, :10%; Tolerance, -:10%; Temp, op. max:125(degree C);
CAP ARRAY, 2 X 680PF 50V 0405NPOCAP ARRAY, 2 X 680PF 50V 0405NPO; Capacitance:0.68nF; Voltage rating, DC:50V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W1A; Tolerance, :10%; Tolerance, -:10%; Temp, op. max:125(degree C);
CAP ARRAY, 4 X 100PF 50V 0508NPOCAP ARRAY, 4 X 100PF 50V 0508NPO; Capacitance:0.1nF; Voltage rating, DC:50V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W2A; Tolerance, :10%; Tolerance, -:10%; Temp, op. max:125(degree C);
CAP ARRAY, 2 X 10NF 16V 0405X7RCAP ARRAY, 2 X 10NF 16V 0405X7R; Capacitance:10nF; Voltage rating, DC:16V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W1A; Tolerance, :20%; Tolerance, -:20%; Temp, op. max:125(degree C);
Ceramic Capacitor Array; Capacitor Type:Chip Array; Capacitance:22pF; Capacitance Tolerance: /- 10%; Voltage Rating:50VDC; Capacitor Dielectric Material:Multilayer Ceramic; Package/Case:0405; Termination:SMD RoHS Compliant: Yes
CAP ARRAY, 2 X 1000PF 50V 0405X7RCAP ARRAY, 2 X 1000PF 50V 0405X7R; Capacitance:1nF; Voltage rating, DC:50V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W1A; Tolerance, :10%; Tolerance, -:10%; Temp, op. max:125(degree C);
|
Maxwell Technologies, Inc
|
| HN58X25128TIE HN58X25128FPIE |
Serial Peripheral Interface 128k EEPROM (16-kword × 8-bit) 256k EEPROM (32-kword × 8-bit) Electrically Erasable and Programmable Read Only Memory
|
Renesas Electronics Corporation
|
| SST29EE010-70-4C-UH SST29VE010-70-4C-UH SST29LE010 |
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 70 ns, PQCC32
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 70 ns, PDSO32
1 Mbit (128K x8) Page-Mode EEPROM 1兆位28K的8）页模式EEPROM
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 90 ns, PQCC32
1 Mbit (128K x8) Page-Mode EEPROM 1兆位128K的8）页模式的EEPROM
1 Mbit (128K x8) Page-Mode EEPROM 1兆位28K的8）页模式的EEPROM
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 2.7V PROM, 200 ns, PDSO32
|
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
| AS8SLC128K32Q-55L_883C AS8SLC128K32Q-55L_IT AS8SLC |
128K x 32 SRAM SRAM MEMORY ARRAY
128K X 32 MULTI DEVICE SRAM MODULE, 12 ns, CPGA66 PGA-66
128K X 32 MULTI DEVICE SRAM MODULE, 12 ns, CQFP68 CERAMIC, QFP-68
|
Austin Semiconductor, Inc
Micross Components
|
| MBM29F200BA12 MBM29F200TA12 |
2M (256K×8/128K×16) Bit Flash Memory(V 电源电压256K×8/128K×16闪速存储器) 200万（256K × 8/128K × 16）位快闪记忆体（V的电源电56K × 8/128K × 16闪速存储器
2M (256K?8/128K?16) Bit Flash Memory(??V ?垫??靛?256K?8/128K?16???瀛???ī
|
Fujitsu, Ltd.
Fujitsu Limited
|
| AT17LV002A AT17LV010A AT17LV128A AT17LV256A AT17LV |
2M-bit Configuration EEPROM (5V and 3.3V), Altera Pinout.
1M-bit FPGA Configuration EEPROM (5V and 3.3V). Altera Pinout.
128K-bit FPGA Configuration EEPROM (5V and 3.3V). Altera Pinout.
256K-bit FPGA Configuration EEPROM (5V and 3.3V). Altera Pinout.
512K-bit FPGA Configuration EEPROM (5V and 3.3V). Altera Pinout.
65K-bit FPGA Configuration EEPROM (5V and 3.3V). Altera Pinout.
FPGA configuration EEPROM memory. Memory size 2-Mbit.
FPGA configuration EEPROM memory. Memory size 1-Mbit.
|
Atmel
|
| PIC16F62XT-20E_SS PIC16LF62X-20_P PIC16F62X-20_SO |
FLASH-Based 8-Bit CMOS Microcontroller
Code Hopping Encoder(KeeLoq 码编码器)
RESISTOR,ARRAY,2.2K, 5%
RES ARRAY 100 OHM 4TERM 2RES SMD
BBG ECL GATE OR/NOR TRPL; Package: SOEIAJ-16; No of Pins: 16; Container: Tape and Reel; Qty per Container: 2000
Triple 2-3-2-Input OR/NOR Gate; Package: SOEIAJ-16; No of Pins: 16; Container: Tape and Reel; Qty per Container: 2000
Enhanced FLASH/EEPROM 8-Bit Microcontroller(驱动/吸收电流高，工作电压2.0~5.5V，微控制
Enhanced FLASH 8-Bit CMOS Microcontroller with A/D Converter and EEPROM Data Memory(带ADC转换器和EEPROM数据存储器的闪速CMOS微控制器)
Enhanced FLASH/EEPROM 8-Bit Microcontroller With A/D Module(驱动/吸收电流高，工作电压3.0~5.5V，微控制
Enhanced FLASH/EEPROM 8-Bit Microcontroller With A/D Module(驱动/吸收电流高，工作电压2.5~5.5V，微控制
8-Pin, 8-Bit CMOS Enhanced FLASH Microcontroller with A/D Converter and EEPROM Data Memory(-2.5~5.5V,具ADC,闪速微控制
OTP 8-Bit CMOS Microcontroller with EEPROM Data Memory(工作电压2.5~5.5V路比较器，微控制
2K 5.0V IIC serial EEPROMs(2.5V~5.5V,2K1M次擦写周ISO7816标准)
1K 5.0V IIC serial EEPROMs(2.5V~5.5V,1K1M次擦写周ISO7816标准)
256K 5.0V SPI Bus Serial EEPROM(4.5~5.5V,256K浣?SPI?荤嚎涓茶?EEPROM)
|
Microchip Technology Inc.
|
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