| PART |
Description |
Maker |
| LNA2901L |
GaAs Infrared Light Emitting Diode 5 mm, 1 ELEMENT, INFRARED LED, 950 nm
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| QED123 QED122 QED121 QED122A3R0 |
PLASTIC INFRARED LIGHT EMITTING DIODE 4.95 mm, 1 ELEMENT, INFRARED LED, 890 nm
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| SFH4205 Q62702-P5165 Q62702-P978 SFH4200 |
Schnelle GaAs-IR-Lumineszenzdiode (950 nm),High-Speed GaAs Infrared Emitter (950 nm)
High-Speed GaAs Infrared Emitter (950...
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| OPE5585 |
High Speed GaAlAs Infrared Emitter
|
OPTEK Technologies
|
| OPE5985 |
High Speed GaAlAs Infrared Emitter
|
OPTEK Technologies
|
| OPE5T87 |
High Speed GaAlAs Infrared Emitter
|
List of Unclassifed Manufacturers
|
| TSHF5210 |
High Speed Infrared Emitting Diode in T-13/4 Package
|
Vishay Siliconix
|
| IS457 |
High Speed Response Type OPIC Light Detector
|
Sharp Corporation
SHARP[Sharp Electrionic Components]
|
| OPE5687HP |
High Speed GaAIAs Infrared Emitter
From old datasheet system
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| 16700 |
High-Speed Infrared Emitter with Integrated Drive Electronics
|
OptoDiode Corp
|
| G9204-256D G9494-512D G9494-256D |
Near infrared image sensor (0.9 to 1.7 μm) with high-speed data rate
|
Hamamatsu Corporation
|
