| PART |
Description |
Maker |
| NAND01GW4A2CZB1 NAND01GW4A2AZB1T NAND512R3A0AN1E N |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位千兆位（x8/x1628 Byte/264字的页面.8V/3V，NAND闪存芯片
|
意法半导
STMicroelectronics N.V.
|
| SC16C2550BIBS SC16C2550B07 SC16C2550BIA44 SC16C255 |
5 V, 3.3 V and 2.5 V dual UART, 5 Mbit/s (max.), with 16-byte FIFOs
|
Philips Semiconductors
NXP Semiconductors
|
| SC16C752BIB48 SC16C752BIBS SC16C752B10 |
5 V, 2.2 V and 2.5 V dual UART, 5 Mbit/s (max.), with 64-byte FIFOs
|
NXP Semiconductors
|
| SC16C2550B SC16C2550BIA44 SC16C2550BIB48 SC16C2550 |
5 V, 3.3 V and 2.5 V dual UART, 5 Mbit/s (max.), with 16-byte FIFOs
|
Philips Semiconductors
|
| SC16C554BIB64 SC16C554DBIB64 SC16C554DBIA68 |
SC16C554B/554DB; 5 V, 3.3 V and 2.5 V quad UART, 5 Mbit/s (max.) with 16-byte FIFOs
|
Philips
NXP Semiconductors
|
| SC16C652BIB48 SC16C652BIBS |
5V, 3.3 V and 2.5V dual UART, 5 Mbit/s (max.),with 32-byte FIFOs and infrared(IrDA) encoder/decoder
|
NXP Semiconductors
|
| SC16C654DBIB64 |
SC16C654B/654DB; 5 V, 3.3 V and 2.5 V quad UART, 5 Mbit/s (max.) with 64-byte FIFOs and infrared (IrDA) encoder/decoder
|
Philips
|
| SC16C554BIBM151 SC16C554BIB64157 SC16C554BIBM157 S |
5 V, 3.3 V and 2.5 V quad UART, 5 Mbit/s (max.) with 16-byte FIFOs; Package: SOT414-1 (LQFP64); Container: Tray Pack, Bakeable, Single 4 CHANNEL(S), 5M bps, SERIAL COMM CONTROLLER, PQFP64
5 V, 3.3 V and 2.5 V quad UART, 5 Mbit/s (max.) with 16-byte FIFOs; Package: SOT314-2 (LQFP64); Container: Tray Pack, Bakeable, Multiple 4 CHANNEL(S), 5M bps, SERIAL COMM CONTROLLER, PQFP64
5 V, 3.3 V and 2.5 V quad UART, 5 Mbit/s (max.) with 16-byte FIFOs; Package: SOT414-1 (LQFP64); Container: Tray Pack, Bakeable, Multiple 4 CHANNEL(S), 5M bps, SERIAL COMM CONTROLLER, PQFP64
|
NXP Semiconductors N.V.
|
| SC16C850LIET |
1.8 V single UART, 5 Mbit/s (max.) with 128-byte FIFOs, infrared (IrDA) and 16 mode or 68 mode parallel bus interface
|
NXP Semiconductors
|
| NAND256-A NAND01G-A NAND01GW3A2AZB1 NAND01GW3A0AZB |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位千兆位（x8/x1628 Byte/264字的页面.8V/3V，NAND闪存芯片
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位1千兆位（x8/x1628 Byte/264字的页面1.8V/3V，NAND闪存芯片
128M X 8 FLASH 1.8V PROM, 35 ns, PBGA63
8M X 16 FLASH 1.8V PROM, 35 ns, PDSO48
64M X 8 FLASH 3V PROM, 35 ns, PBGA55
64M X 16 FLASH 1.8V PROM, 35 ns, PDSO48
128M X 8 FLASH 3V PROM, 35 ns, PDSO48
8M X 16 FLASH 3V PROM, 35 ns, PDSO48
32M X 16 FLASH 3V PROM, 35 ns, PDSO48
32M X 16 FLASH 3V PROM, 35 ns, PBGA55
|
ST Microelectronics
意法半导
STMicroelectronics N.V.
NUMONYX
http://
|
| M45PE10 M45PE10-VMP6 M45PE10-VMP6TG M45PE10-VMP6TP |
4 Mbit Uniform Sector, Serial Flash Memory 4兆位统一部门，串行闪
1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface
|
STMicroelectronics N.V.
意法半导
|
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