PART |
Description |
Maker |
V48SC05017 V48SC05017NNFA V48SC05017NMFA V48SC0501 |
85W DC/DC Power Modules
|
Delta Electronics, Inc.
|
V48SC05017-14 |
85W DC/DC Power Modules
|
Delta Electronics, Inc.
|
LCT43-E |
AC-DC / 10W - 85W
|
Emerson
|
LPT52 |
AC-DC / 10W - 85W
|
Emerson
|
2SA20881 2SB11321 2SB11841 2SB1198K1 2SB12601 2SB1 |
Medium power transistor (?60V, ?0.5A) Medium Power Transistor (?32V,?1A) Power Transistor (?60V, ?3A) Low-frequency Transistor (-80V, -0.5A) Power Transistor (?80V, ?1A) Low VCE(sat) Transistor (?20V, ?3A) Power transistor (?20V, ?2A) General purpose amplification (?30V, ?1A) Low frequency amplifier Medium power transistor (−60V, −0.5A)
|
ROHM[Rohm]
|
IPB100N08S2L-07 IPP100N08S2L-07 SP0002-19052 SP000 |
100 A, 75 V, 0.0068 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB OptiMOS? Power-Transistor OptiMOS㈢ Power-Transistor OptiMOSPower-Transistor
|
Infineon Technologies AG
|
IPI25N06S3-25 IPB25N06S3-25 SP0000-88000 SP0000-88 |
OptiMOS?-T Power-Transistor OPTIMOS⑶-T POWER-TRANSISTOR OptiMOS㈢-T Power-Transistor OptiMOST Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
BLF872 BLF872-2015 |
UHF power LDMOS transistor UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors Quanzhou Jinmei Electro...
|
IPB77N06S3-09 IPI77N06S3-09 IPP77N06S3-09 SP0000-8 |
OptiMOST Power-Transistor ㈢的OptiMOS - T的功率晶体管 OptiMOS㈢-T Power-Transistor OptiMOS?-T Power-Transistor
|
Maxim Integrated Products, Inc. Infineon Technologies AG
|
IPB100N06S3-03 IPP100N06S3-03 IPI100N06S3-03 SP000 |
OptiMOST Power-Transistor ㈢的OptiMOS - T的功率晶体管 OptiMOS㈢-T Power-Transistor OptiMOS?-T Power-Transistor
|
Infineon Technologies AG
|
2N6836 MJ15001 MJ4031 MJ15025 |
European Master Selection Guide 1986 15 A, 140 V, NPN, Si, POWER TRANSISTOR 16 A, 80 V, PNP, Si, POWER TRANSISTOR 16 A, 250 V, PNP, Si, POWER TRANSISTOR
|
Motorola AMERICAN MICROSEMICONDUCTOR INC
|