| PART |
Description |
Maker |
| MH16S64APFC-7 MH16S64APFC-7L MH16S64APFC-8 MH16S64 |
1,073,741,824-BIT (16,777,216 - WORD BY 64-BIT)SynchronousDRAM
1 /073 /741 /824-BIT (16 /777 /216 - WORD BY 64-BIT)SynchronousDRAM
|
Mitsubishi Electric Sem...
Mitsubishi Electric Corporation
|
| MH16D64AKQC-10 MH16D64AKQC-75 |
1 /073 /741 /824-BIT (16 /777 /216-WORD BY 64-BIT) Double Data Rate Synchronous DRAM Module
JT 55C 55#20 PIN PLUG
|
Mitsubishi Electric Corporation
|
| M5M29GB161BVP M5M29WT160BVP M5M29GT161BVP M5M29GT1 |
16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY 16,777,216位（2097,152 - Word 1048,576字BY16位）的CMOS 3.3只，块擦除闪
|
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| MH16S72APHB-7 MH16S72APHB-6 MH16S72APHB-8 |
1,207,959,552-BIT (16,777,216 - WORD BY 72-BIT)Synchronous DRAM
|
Mitsubishi Electric Corporation
|
| MH16S72BDFA-8 MH16S72BDFA-7 |
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
|
Mitsubishi Electric Corporation
|
| MH16S72BDFA-8 MH16S72BDFA-7 |
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M6MGB E99007 |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY
From old datasheet system
|
Mitsubishi
|
| M6MGB_T162S2BVP M6MGB E99005_A M6MGB162S2BVP M6MGT |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MH16M40AJD-6 MH16M40AJD |
FAST PAGE MODE ( 16 /777 /216-WORD BY 40-BIT ) DYNAMIC RAM
FAST PAGE MODE ( 16,777,216-WORD BY 40-BIT ) DYNAMIC RAM
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| 75220 |
1.85 by 1.85mm (.073 by .073) Pitch GbX? Module-to-Backplane Connector System In 4- and 5-Pair Columns
|
Molex Electronics Ltd.
|
