| PART |
Description |
Maker |
| M58WR064T85ZB6T M58WR064B M58WR064B100ZB6T M58WR06 |
64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| M58WR064HB M58WR064HT M58WR064HT60ZB6E M58WR064HT6 |
64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V supply Flash memories
|
Numonyx B.V
|
| M58WR064HL70ZB6E M58WR064HL70ZB6U |
64 Mbit (4Mb x16, Mux I/O, Multiple Bank, Burst) 1.8V supply Flash memories
|
Numonyx B.V
|
| M29DW640F70N1 M29DW640F70N1E M29DW640F70N1F M29DW6 |
64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
|
Numonyx B.V
|
| M29DW127G M29DW127G70NF6E |
128-Mbit (8 Mbit x16 or 16 Mbit x8 , multiple bank, page, dual boot) 3 V supply flash memory
|
Numonyx B.V
|
| M58WR016QB60ZB6 M58WR032QB60ZB6 M58WR016QB60ZB6E M |
16 Mbit and 32 Mbit (x16, Multiple Bank, Burst) 1.8V supply Flash memories
|
Numonyx B.V
|
| M58WR016QT80ZB6 M58WR016QT80ZB6E M58WR016QT80ZB6F |
16 Mbit and 32 Mbit (x16, Multiple Bank, Burst) 1.8V supply Flash memories
|
Numonyx B.V
|
| M36W0R6050B1 M36W0R6050B1ZAQE M36W0R6050B1ZAQF M36 |
64 Mbit (4 Mb ×16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb ×16) PSRAM, multi-chip package
|
Numonyx B.V
|
| M28W640C-ZBT M28W640CT90ZB6T M28W640CB80ZB1T M28W6 |
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory 64兆位4Mb的x16插槽，启动块3V电源快闪记忆
64 Mbit 4Mb x16/ Boot Block 3V Supply Flash Memory
|
STMicroelectronics N.V.
意法半导
|
| M58PR512JE96ZB5E M58PR512JE96ZB5F M58PR256JE96ZB5E |
256 Mbit or 512 Mbit (x16, Multiple Bank, Multilevel, Burst) 1.8 V supply Flash memories
|
STMicroelectronics
|
| KMM5364005BSW |
4MB X 36 DRAM Simm Using 4MB X 16 & Quad Cas 4MB X 4
|
Samsung Semiconductor
|
| M36L0R7060B1 M36L0R7060B1ZAQE M36L0R7060B1ZAQF M36 |
128 Mbit (Multiple Bank, Multilevel, Burst) Flash memory and 64 Mbit (Burst) PSRAM, 1.8 V supply, multichip package
|
Numonyx B.V
|
