| PART |
Description |
Maker |
| V802ME03 |
LOW COST - HIG PERFORMANCE VOLTAGE CONTROLLED OSCILLATOR
|
ZCOMM[Z-Communications, Inc]
|
| TGA6316 TGA6316-EEU |
6 - 17 GHz Dual-Channel Power Amplifier
|
TriQuint Semiconductor,Inc.
TRIQUINT[TriQuint Semiconductor]
|
| IT2002 |
2 to 26.5 GHz dual-channel high-power amplifier
|
Iterra
|
| 2SC5585 |
Hig current. Low VCE(sat):VCE(sat) 250mV at IC=200mA/IB=10mA
|
TY Semiconductor Co., Ltd
|
| HMC471MS8G |
SiGe HBT DUAL CHANNEL GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz
|
HITTITE[Hittite Microwave Corporation]
|
| ADL5802 |
Dual Channel High IP3 100 MHz TO 6 GHz Active Mixer
|
Analog Devices
|
| FMPA2151 |
2.4-2.5 GHz and 4.9-5.9 GHz Dual Band Linear Power Amplifier Module
|
http://
FAIRCHILD[Fairchild Semiconductor]
|
| SST13LP05-MLCF |
2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier Module
|
SILICON STORAGE TECHNOLOGY INC
|
| 773D |
772D Coaxial Dual-Directional Coupler 2 GHz to 18 GHz
|
Agilent (Hewlett-Packard)
|
| BCM43340 BCM43340HKUBG BCM43340XKUBG |
Single-Chip, Dual-Band (2.4 GHz/5 GHz) IEEE 802.11 a/b/g/n MAC/Baseband/Radio with Integrated Bluetooth 4.0
|
Cypress Semiconductor
|
| AGR26045EF |
45 W, 2.535 GHz-2.655 GHz, N-Channel E-Mode, Lateral MOSFET
|
TriQuint Semiconductor
|
| FDS8958B |
30V Dual N & P-Channel PowerTrenchMOSFET
Dual N & P-Channel PowerTrench? MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ
Dual N & P-Channel PowerTrench垄莽 MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 m楼? Q2-P-Channel: -30 V, -4.5 A, 51 m楼?
|
Fairchild Semiconductor
|
