| PART |
Description |
Maker |
| M27W102 |
1Mbit (64Kb x 16) Low Voltage UV EPROM and OTP EPROM(1Mb低压UV EPROM和OTP EPROM)
|
意法半导
|
| M68AW127 M68AW127B M68AW127BL10MC1T M68AW127BL10MC |
1Mbit 128K x8, 3.0V Asynchronous SRAM
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| FM27C010 FM27C010X150 FM27C010X90 FM27C010X120 FM2 |
128K X 8 OTPROM, 150 ns, PQCC32 PLASTIC, LCC-32
From old datasheet system
1,048,576-Bit (128K x 8)High Performance CMOS EPROM
|
Fairchild Semiconductor, Corp.
|
| AM27C2048 AM27C2048-120DC AM27C2048-120DC5 AM27C20 |
2 Megabit (128 K x 16-Bit) CMOS EPROM
128K X 16 OTPROM, 120 ns, PQCC44
2 Megabit (128 K x 16-Bit) CMOS EPROM 2兆位28亩16位）的CMOS存储
2 Megabit (128 K x 16-Bit) CMOS EPROM 2兆位28亩16位）CMOS存储
TESTER FLAT CABLE 2兆位28亩16位）的CMOS存储
2 Megabit (128 K x 16-Bit) CMOS EPROM 128K X 16 UVPROM, 55 ns, CDIP40
4-Bit Binary Full Adders With Fast Carry 16-SO 0 to 70 2兆位128亩16位）的CMOS存储
TESTER MODULAR CABLE RJ45/12/11
4-Bit Binary Full Adders With Fast Carry 16-SOIC 0 to 70
Evaluation Kit for the MAX3869
2 megabit CMOS EPROM
|
SPANSION LLC
Advanced Micro Devices, Inc.
AMD[Advanced Micro Devices]
|
| MX27L1000 MX27L1000MC-12 MX27L1000MC-15 MX27L1000M |
1M-BIT [128Kx8] LOW VOLTAGE OPERATION CMOS EPROM 128K X 8 OTPROM, 90 ns, PDSO32
1M-BIT [128Kx8] LOW VOLTAGE OPERATION CMOS EPROM 128K X 8 OTPROM, 90 ns, PQCC32
1M-BIT [128Kx8] LOW VOLTAGE OPERATION CMOS EPROM 128K X 8 OTPROM, 90 ns, PDIP32
TRIM POT 500 OHM 3MM SQUARE SMD
TRIM POT 50K OHM 3MM SQUARE SMD
|
MACRONIX INTERNATIONAL CO LTD
Macronix International Co., Ltd.
MCNIX[Macronix International]
|
| 27C010 TD27C010 |
1M (128K x 8) CHMOS EPROM
|
Intel
|
| 27C1000A-90 27C1000A-12 27C1000A-15 27C1000A-10 |
1M-BIT [128K x 8] CMOS EPROM
|
Macronix International Co., Ltd.
|
| 27C010TRT4FS-20 27C010T 27C010TRPFB-12 27C010TRPFB |
1 Megabit (128K x 8-Bit) - OTP EPROM
|
MAXWELL[Maxwell Technologies]
|
| CY27C128 CY27C128-120JC CY27C128-120PC CY27C128-12 |
128K (16K x 8-Bit) CMOS EPROM
|
Cypress Semiconductor
|
| UNR2225 UNR2226 UNR2227 UN2225 UN2226 UN2227 |
Flash Memory IC; Memory Configuration:128K x 8; Memory Size:1Mbit; Package/Case:32-DIP; Supply Voltage Max:5.5V; Access Time, Tacc:120ns; Mounting
Silicon NPN epitaxial planar type
|
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| NTE21128 |
Integrated Circuit NMOS, 128K (16K x 8) UV EPROM
|
NTE[NTE Electronics]
|
