PART |
Description |
Maker |
MS28F016SA VS28F016SA |
16-Mbit (2 Mbit x 8) FlashFile Memory(16-M2 Mx 8) FlashFile 存储 16-Mbit (1 Mbit x 16) FlashFile Memory(16-M1 Mx 16) FlashFile 存储 16兆位兆位× 16FlashFile内存6米位米位× 16FlashFile存储器)
|
Intel Corp. Intel, Corp.
|
DT28F320S5-120 DA28F320S5-120 |
Word-wide FlashFile memory. 32 Mbit, access speed 120 ns
|
Intel
|
LTC1599ACG LTC1599BCG LTC1599BCN LTC1599BIG LTC159 |
From old datasheet system 16-Bit Byte Wide, Low Glitch Multiplying DAC with 4-Quadrant Resistors 16-Bit Byte Wide Low Glitch Multiplying DAC with 4-Quadrant Resistors
|
LINER[Linear Technology]
|
LTC1599BCGTR |
16-Bit Byte Wide, Low Glitch Multiplying DAC with 4-Quadrant Resistors
|
Linear Technology
|
BTS4141D Q67060-S6098 |
Smart High-Side Power Switch 1 Channel: 1 x 200m?/a> Smart High Side Switches - 1x 200m? 12-45V P-TO-252 Smart High-Side Power Switch 1 Channel: 1 x 200mз POWERLINE: RP15-S_DEW - 4:1 Wide Input Voltage Range- 15 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- International Safety Standard Approvals- Standard 50.8 x40.6x10.2mm Package- Efficiency to 82%
|
INFINEON[Infineon Technologies AG]
|
P89LPC971FDH P89LPC972 |
8-bit microcontroller with accelerated two-clock 80C51 core 2 kB/4 kB/8 kB wide-voltage byte-erasable flash
|
NXP Semiconductors
|
AT90SC19236R AT90SC19236RT |
Low-power, High performance 8-bit/16-bit secure microcontroller with 192K Byte ROM, 36K Byte EEPROM programmable internal oscillator. Security Features: MMU, MED, OTP (one time programmable) EEPROM area, RN (Random Number Generator), "out High-performance, Low-power secureAVR?Enhanced RISC architecture. SECURE MICROCONTROLLER FOR SMART CARDS
|
ATMEL Corporation
|
LC87F40C8A |
Internal 128K-byte FROM (ROM/CGROM), 2048 byte RAM, 1024-byte CGRAM, and 704×10-bit CRT Display RAM 8-bit 1-chip Microcontroller
|
Sanyo Semicon Device
|
AD9814 |
Low Power 14-Bit, 3-Channel CCD Signal Processor with Progammable Serial Interface and Byte-Wide Data Output Format
|
AD
|
NAND02G-B2C NAND02GR3B2BZA1E NAND02GR4B2BZA1F NAND |
1千兆2千兆位,2112 Byte/1056字的页面.8V/3VNAND闪存 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 1千兆千兆位,2112 Byte/1056字的页面.8V/3V,NAND闪存
|
意法半导 STMicroelectronics N.V.
|
LC87F7932B |
32K-byte FROM and 2048-byte RAM integrated 8-bit 1-chip Microcontroller
|
Sanyo Semicon Device
|