| PART |
Description |
Maker |
| UPC1658G UPC1658G-E1 |
RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
Low Noise, High Frequncy Si MMIC Amplifier(低噪声高频率放大
LOW NOISE/ HIGH FREQUENCY Si MMIC AMPLIFIER
LOW NOISE, HIGH FREQUENCY Si MMIC AMPLIFIER
LOW NOISE HIGH FREQUENCY Si MMIC AMPLIFIER
|
NEC Corp.
NEC[NEC]
|
| GS8170LW36C-250 GS8170LW72C-200 GS8170LW72C-300 GS |
Low-Noise Operational Amplifier 8-SOIC -40 to 85
18Mb sigma 1x1Lp CMOS I/O Late Write SigmaRAM
Low-Noise Operational Amplifier 8-PDIP -40 to 85 35.7西格x1Lp的CMOS的I / O后写入SigmaRAM
Low-Noise Operational Amplifier 8-SO -40 to 85 35.7西格x1Lp的CMOS的I / O后写入SigmaRAM
|
Electronic Theatre Controls, Inc.
|
| AD603SQ/883B AD603 AD603SQ883B |
Low noise, 90 MHz variable-gain amplifier
Low Noise, 90 MHz Variable Gain Amplifier
Low Noise, Voltage-Controlled Amplifier For Use In RF And IF AGC Systems
|
Analog Devices, Inc.
|
| EL2126CS-T EL2126CW-T EL2126CW-T7A EL2126CW-T7 EL2 |
Ultra-Low Noise/ Low Power/ Wideband Amplifier
Op Amp, 100MHz Wideband, Ultra Low Noise 1.3nV/√Hz, Low Power, 2.5-15VDC
Ultra-Low Noise Low Power Wideband Amplifier
|
INTERSIL[Intersil Corporation]
|
| OP-27EP OP-27GZ OP-27 OP-27AJ OP-27AZ OP-27BJ OP-2 |
LOW NOISE, PRECISION OPERATIONAL AMPLIFIER 低噪声，高精度运算放大器
Low Noise, Precision Operational Amplifier; Package: LCC:CER LEADLESS CHIP CARR; No of Pins: 20; Temperature Range: Military OP-AMP, 200 uV OFFSET-MAX, 8 MHz BAND WIDTH, PQCC20
Low Noise, Precision Operational Amplifier; Package: ROUND HEADER/METAL CAN; No of Pins: 8; Temperature Range: Military OP-AMP, 60 uV OFFSET-MAX, 8 MHz BAND WIDTH, MBCY8
4" CONN,COMP.,EMT,DC 低噪声，高精度运算放大器
LOW NOISE PRECISION OPERATIONAL AMPLIFIER
|
Analog Devices, Inc.
Linear Technology, Corp.
AD[Analog Devices]
|
| HS9-OP470ARH-Q HS-OP470AR HS-OP470ARH 5962R9853301 |
16 AMP SPDT MINIATURE POWER RELAY
Radiation Hardened, Very Low Noise
Quad Operational Amplifier(抗辐射低噪声四路运算放大
Radiation Hardened, Very Low Noise Quad Operational Amplifier
Radiation Hardened/ Very Low Noise Quad Operational Amplifier
|
Intersil Corporation
|
| 2SC9014 |
PRE-AMPLIFIER, LOW LEVEL & LOW NOISE
PRE-AMPLIFIER/ LOW LEVEL & LOW NOISE
Transistors
PRE-AMPLIFIER, LOW LEVEL & LOW NOISE
|
Electronic Theatre Controls, Inc.
ETC
List of Unclassifed Manufacturers
USHA India LTD
|
| 2SK30ATM E001523 |
From old datasheet system
LOW NOISE PRE-AMPLIFIER, TONE CONTROL AMPLIFIER AND DC-DC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS
N CHANNEL JUNCTION TYPE (LOW NOISE PRE-AMPLIFIER, TONE CONTROL AMPLIFIER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS)
|
Toshiba Corporation
Toshiba Semiconductor
|
| K4S64323LF-DN15 K4S64323LF-DN15-PB K4S64323LF-DN1H |
2M X 32 SYNCHRONOUS DRAM, 9 ns, PBGA90
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 14-SOIC 0 to 70 2Mx32移动SDRAM 90FBGA
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 14-SOIC 2Mx32移动SDRAM 90FBGA
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-PDIP 0 to 70 2Mx32移动SDRAM 90FBGA
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 8-CDIP -55 to 125 2Mx32移动SDRAM 90FBGA
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 20-LCCC -55 to 125 2Mx32移动SDRAM 90FBGA
2Mx32 Mobile SDRAM 90FBGA 2Mx32移动SDRAM 90FBGA
Dual Rail-To-Rail Micropower Operational Amplifier 8-SOIC 0 to 70
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| 2SJ109 E001254 |
P CAHNNEL JUNCTION TYPE (LOW NOISE AUDIO AMPLIFIER/ DIFFERENTIAL AMPLIFIER APPLICATIONS)
P CAHNNEL JUNCTION TYPE (LOW NOISE AUDIO AMPLIFIER, DIFFERENTIAL AMPLIFIER APPLICATIONS)
LOW NOISE AUDIO AMPLIFIER APPLICATIONS DIFFERENTIAL AMPLIFIER APPLICATIONS
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| ATR0610-PQQ ATR0610 |
2.7 V GPS LOW NOISE AMPLIFIER RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
Atmel Corp.
ATMEL[ATMEL Corporation]
|
