| PART |
Description |
Maker |
| KTK161 |
FM RF,AM RF,VHF Band Amp.
N CHANNEL JUNCTION FIFLD EFFFCT TRANSISTOR (HIGH FREQUENCY/ VHF BAND AMPLIFIER)
N CHANNEL JUNCTION FIFLD EFFFCT TRANSISTOR (HIGH FREQUENCY, VHF BAND AMPLIFIER) N通道结FIFLD EFFFCT晶体管（高频，甚高频波段放大器）
|
Korea Electronics (KEC)
KEC(Korea Electronics)
KEC Holdings
|
| 2SC2420 |
VHF BAND POWER AMPLIFIER APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC2118 |
VHF BAND POWER AMPLIFIER APPLICATIONS
|
Toshiba Semiconductor
|
| BB304C BB304CDW-TL-E B304CDW-TL-E |
VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
Built in Biasing Circuit MOS FET IC VHF RF Amplifier
|
Renesas Electronics Corporation
|
| 2SC2638 |
TRANSISTOR (VHF BAND POWER AMPLIFIER APPLICATIONS)
|
TOSHIBA
|
| 2SC2639 |
TRANSISTOR (VHF BAND POWER AMPLIFIER APPLICATIONS)
|
TOSHIBA
|
| 2SC2640 |
TRANSISTOR (VHF BAND POWER AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
| NE55410GR07 |
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
California Eastern Labs
|
| NE55410GR NE55410GR-T3-AZ |
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
NEC
|
| RFM08U9X |
RF POWER MOSFET FOR VHF.AND UHF.BAND POWER AMPLIFIER
|
Toshiba Semiconductor
|
| EC3H02B |
VHF to UHF Low-Noise Wide-Band Amplifier Applications 甚高频到超高频低噪声宽带放大器应
NPN Epitaxial Planar Silicon Transistor VHF to UHF Low-Noise Wide-Band Amplifier Applications
|
Sanyo Electric Co., Ltd.
Sanyo Semicon Device
|
| BGY145C |
VHF amplifier module 174 MHz - 200 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
NXP Semiconductors N.V.
Philips Semiconductors
|
