| PART |
Description |
Maker |
| MP4015 |
Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive. Inductive Load Switching.
TOSHIBA Power Transistor Module
|
TOSHIBA[Toshiba Semiconductor]
|
| 1DI300MN-050 |
TRANSISTOR | BJT POWER MODULE | DARLINGTON | 600V V(BR)CEO | 300A I(C)
Power Transistor Module
|
Fuji Electric
|
| STE07DE220 E07DE220 |
Hybrid emitter switched bipolar transistor ESBT 2200 V - 7 A - 0.07 Ohm power module
Hybrid emitter switched bipolar transistor ESBT 2200V - 7A - 0.07з power module
Hybrid emitter switched bipolar transistor ESBT 2200V - 7A - 0.07搂? power module
Hybrid emitter switched bipolar transistor ESBT 2200V - 7A - 0.07 power module
|
ST Microelectronics
STMicroelectronics
|
| MP4020 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
|
TOSHIBA
|
| FF75R10KN FF150R10KN FF100R10KN FS50R10KF2 FS8R06K |
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 75A I(C) | M:HL093HD5.6
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 150A I(C) | M:HL093HW048
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 100A I(C) | M:HL093HW048
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CES | 50A I(C)
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 8A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五（巴西）国际消费电子展| 8A条一（c
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 15A I(C) | M:HL080HD5.3 晶体管| IGBT的|正陈|双| 1KV交五（巴西）国际消费电子展|5A一（c）|米：HL080HD5.3
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 75A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五（巴西）国际消费电子展| 75A条一（c
|
Delta Electronics, Inc.
Fuji Electric Holdings Co., Ltd.
Infineon Technologies AG
|
| KS8245A1 |
Single Darlington Transistor Module (15 Amperes/600 Volts) 15 A, 450 V, NPN, Si, POWER TRANSISTOR
|
Powerex, Inc.
Powerex Power Semiconductors
|
| CPW256A CPW255A |
TRANSISTOR | MOSFET POWER MODULE | FULL BRIDGE | 500V V(BR)DSS | 17.5A I(D) 晶体管| MOSFET功率模块|全桥| 500V五（巴西）直| 17.5AI（四
TRANSISTOR | MOSFET POWER MODULE | FULL BRIDGE | 500V V(BR)DSS | 11A I(D)
|
Electronic Theatre Controls, Inc.
|
| BSM25GAL100D BSM25GB100D |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 25A I(C)
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1KV V(BR)CES | 25A I(C)
|
|
| QCA100A40 QCA100A60 QBB100A60 |
(QCA100A40 / QCA100A60) TRANSISTOR MODULE
(QBB100A40 / QBB100A60) TRANSISTOR MODULE
|
SanRex Corporation
|
| WF8M32-XG4DX5 WF8M32-150G4DC5 WF8M32-120G4DI5 WF8M |
100ns; 5V power supply; 8M x 32 flash module
120ns; 5V power supply; 8M x 32 flash module
150ns; 5V power supply; 8M x 32 flash module
8M X 32 FLASH 5V PROM MODULE, 150 ns, CQFP68 40 MM, DUAL CAVITY, CERAMIC, QFP-68
8Mx32 5V Flash Module(8Mx32 5V闪速存储器模块)
Flash MCP
|
Glenair, Inc.
White Electronic Designs Corporation
|
| 1DI300D100 1DI300A120 |
Power Transistor Module
|
Fuji Electric
|
| 1DI300MP-120 |
POWER TRANSISTOR MODULE
|
http://
Fuji Electric
|
