| PART |
Description |
Maker |
| GS74116A GS74116ATP-10 GS74116AJ-12I GS74116AJ-12I |
256K X 16 STANDARD SRAM, 7 ns, PDSO44
256K x 16 4Mb Asynchronous SRAM 256K × 16 4Mb的异步SRAM
RES, MTF 20K 1/4W 2%
ER 16C 16#16 SKT PLUG
ER 13C 3#8 3#12 7#16 SKT PLUG
10ns 256K X 16 4Mb Asynchronous SRAM
256K X 16 STANDARD SRAM, 7 ns, PBGA48
|
SRAM
Electronic Theatre Controls, Inc.
GSI[GSI Technology]
N.A.
ETC
|
| AS7C33256NTF32_36A AS7C33256NTF32-36A.V.1.1 AS7C33 |
3.3V 256K x 2/36 Flowthrough Synchronous SRAM with NTD 256K X 32 ZBT SRAM, 8.5 ns, PQFP100
3.3V 256K x 2/36 Flowthrough Synchronous SRAM with NTD 256K X 32 ZBT SRAM, 10 ns, PQFP100
3.3V 256K x 2/36 Flowthrough Synchronous SRAM with NTD 256K X 36 ZBT SRAM, 8.5 ns, PQFP100
3.3V 256K x 2/36 Flowthrough Synchronous SRAM with NTD 256K X 36 ZBT SRAM, 7.5 ns, PQFP100
DIODE ZENER SINGLE 1000mW 24Vz 10.5mA-Izt 0.05 5uA-Ir 18.2Vr DO41-GLASS 5K/REEL
DIODE ZENER SINGLE 1000mW 36Vz 7mA-Izt 0.05 5uA-Ir 27.4Vr DO41-GLASS 5K/REEL
From old datasheet system
NTD? Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| MT5C1005 MT5C1005C-20L_883C MT5C1005C-20L_IT MT5C1 |
256K x 4 SRAM SRAM MEMORY ARRAY
|
ETC
AUSTIN[Austin Semiconductor]
|
| LC35256FM LC35256FM-70U FT-55U FT-70U LC35256FT-70 |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
256K (32768 words 8 bits) SRAM Control Pins: NOT OE and NOT CE
256K (32768 words x 8 bits) SRAM Control Pins: Not OE and Not CE
256K (32768 words X 8 bits) SRAM Control Pins: OE and CE
256K (32768 words 8 bits) SRAM Control Pins: OE and CE
SRAM,32KX8,CMOS,SOP,28PIN,PLASTIC
From old datasheet system
|
Intersil
Sanyo Semiconductor Corp
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
|
| AS5C2568 AS5C2568DJ-20_XT AS5C2568DJ-12_883C AS5C2 |
SRAM
32K x 8 SRAM SRAM MEMORY ARRAY
SRAM 静态存储器
|
ETC
AUSTIN[Austin Semiconductor]
Electronic Theatre Controls, Inc.
|
| CY7C1355A-117BGC CY7C1355A-117BGI CY7C1357A-100AC |
256K x 36/512K x 18 Synchronous Flow-Thru SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7 ns, PQFP100
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY7C1368C-200AJXI CY7C1368C-200AXC |
9-Mbit (256K x 32) Pipelined DCD Sync SRAM 256K X 32 CACHE SRAM, 3 ns, PQFP100
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| V62C3802048LL-35T V62C3802048LL-35V V62C3802048LL- |
256K X 8 STANDARD SRAM, 35 ns, PDSO32
256K X 8 STANDARD SRAM, 45 ns, PDSO32
Ultra Low Power 256K x 8 CMOS SRAM 超低功256K × 8 CMOS SRAM
Ultra Low Power 256K x 8 CMOS SRAM 超低功56K × 8 CMOS SRAM
|
MOSEL-VITELIC
Mosel Vitelic, Corp.
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic Corp
|
| GS88037BGT-250V GS88037BT-250IV GS88037BT-250V GS8 |
256K x 36 9Mb Sync Burst SRAM 256K X 36 CACHE SRAM, 2.5 ns, PQFP100
|
GSI Technology, Inc.
GSI[GSI Technology]
|
| HM66AEB18205 HM66AEB18205BP-33 HM66AEB18205BP-30 H |
Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM Separate I/O 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
| UPD42S16100LLA-A80 UPD42S16100LG3-A80-7JD UPD42S17 |
18-Mbit (512K x 36/1M x 18) Pipelined SRAM
18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM
9-Mbit (256K x 32) Pipelined DCD Sync SRAM
9-Mbit (256K x 36/512K x 18) Pipelined DCD Sync SRAM
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM
x1 Fast Page Mode DRAM x1快速页面模式的DRAM
|
TOKO, Inc.
EPCOS AG
|
