| PART |
Description |
Maker |
| SD1272.PDF RF273 SD1272 |
RF & MICROWAVE TRANSISTORS 130...230MHz FM MOBILE APPLICATIONS
From old datasheet system
|
MICROSEMI[Microsemi Corporation]
|
| BAV199LT1 |
70 V, 215 mA, dual switching diode
|
Leshan Radio Company
|
| RA07M2127M10 |
215-270MHz 7W 7.2V, 2Stage Amp. For PORTABLE RADIO
|
Mitsubishi Electric Semiconductor
|
| HPR104W/H HPR114W/H HPR115W/H HPR105W/H HPR106W/H |
Ribbon contact connectors; HRS No: 215-0089-0 59
Analog IC 模拟IC
|
Hitachi,Ltd.
Newhaven Display International, Inc.
|
| NJU6677 |
88Com × 132Seg Output Bit Map LCD Driver
|
New Japan Radio
|
| NJU6678V |
104Com × 132Seg Output Bit Map LCD Driver
|
New Japan Radio
|
| NJU6572A |
16Com × 61Seg Output Bit Map LCD Driver
|
New Japan Radio
|
| NJU6824 |
128COMMON × 128RGB LCD DRIVER FOR 4,096-COLOR STN DISPLAY
|
New Japan Radio
|
| CMBD1202 CMBD1204 CMBD1205 CMBD1201 CMBD1203 |
SMALL SIGNAL DIODE VOLTAGE RANGE 75 Volts CURRENT 215 mAmpere
|
Rectron Semiconductor
|
| NJU6682 |
160Com × 132Seg 4-level Gray Scale Bit Map LCD Driver
|
New Japan Radio
|
| FSPYE234D1 FSPYE234F4 FN4873 FSPYE234R4 FSPYE234F |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 250 V, 0.215 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射，抗SEGR N沟道功率MOSFET（抗辐射沟道马鞍山场效应管）
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
