| PART |
Description |
Maker |
| SKDH116_12-L100 SKDH116_16-L100 SKDH116 SKDH116/12 |
MOSFET; ID (A): 0.02; VDS (V): 6; Pch : 0.1; |yfs| (S) typ: 0.024; PG (dB) typ: 24; Ciss (pF) typ: 1.75; NF (dB) typ: 1.5; IDSS (mA): -; Package: CMPAK-4
3-Phase Bridge Rectifier IGBT braking chopper
|
Semikron International
|
| S6968-01 |
MOSFET, Switching; VDSS (V): 60; ID (A): 2; Pch : 0.8; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: [0.111]; RDS (ON) typ. (ohm) @2.5V: 0.129; Ciss (pF) typ: 320; toff (µs) typ: 0.0397; Package: MPAK
|
Hamamatsu Photonics
|
| S3902 S3903 S3903-1024Q S3903-512Q |
MOSFET, Switching; VDSS (V): 400; ID (A): 17; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
MOSFET, Switching; VDSS (V): 450; ID (A): 14; Pch : -; RDS (ON) typ. (ohm) @10V: 0.43; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
NMOS linear image sensor Current output, high UV sensitivity, excellent linearity, low power consumption
MOSFET, Switching; VDSS (V): 450; ID (A): 22; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: -; Package: TO-3P
|
Hamamatsu Photonics
|
| CRG01 CRG02 |
Rectifier Silicon Diffused Type General Purpose Rectifier Applications
|
TOSHIBA
|
| E28 E116 E113 E30 E106 E103 E105 E112 E209 E3 E100 |
Yellow, mini LED. Lens translucent. Luminous intensity at 10mA: 2.0mcd(min), 3.5mcd(max). Forward voltage at 20mA: 2.1V(typ), 2.5V(max).
Orange InGaAIP, T-1 3/4, ultra bright LED. Lens orange translucent. Luminous intensity at 20mA: 700mcd(min), 3000mcd(max). Forward voltage at 20mA: 1.8V(typ), 2.3V(max).
Super bright green, mini LED. Lens translucent. Luminous intensity at 10mA: 10.0mcd(min), 16.0mcd(max). Forward voltage at 20mA: 2.2V(typ), 2.5V(max).
Green T-1, right angle LED(3mm). Lens diffused. Luminous intensity at 10mA: 5.0mcd(typ), 20.0mcd(max). Forward voltage at 20mA: 2.2V(typ), 2.5V(max).
Red T-1, right angle LED(3mm). Lens diffused. Luminous intensity at 10mA: 12.5mcd(typ), 32.0mcd(max). Forward voltage at 20mA: 2.0V(typ), 2.5V(max).
T-1 bright white LED / Lens clear
Miniature LEDs 微型发光二极
Orange, mini LED. Lens translucent. Luminous intensity at 10mA: 3.0mcd(min), 7.0mcd(max). Forward voltage at 20mA: 2.0V(typ), 2.6V(max).
Yellow T-1, right angle LED(3mm). Lens diffused. Luminous intensity at 10mA: 5.0mcd(typ), 20.0mcd(max). Forward voltage at 20mA: 2.1V(typ), 2.5V(max).
High efficiency red, mini LED. Lens translucent. Luminous intensity at 10mA: 4.0mcd(min), 7.0mcd(max). Forward voltage at 20mA: 2.0V(typ), 2.5V(max)(max).
Ultra bright red, mini LED. Lens translucent. Luminous intensity at 10mA: 20.0mcd(min), 60.0mcd(max). Forward voltage at 20mA: 1.85V(typ), 2.5V(max)(max).
Yellow InGaAIP, T-1 3/4, ultra bright LED. Lens yellow translucent. Luminous intensity at 20mA: 400mcd(min), 1600mcd(max). Forward voltage at 20mA: 2.0V(typ), 2.5V(max).
|
Gilway Technical Lamp
International Light Technologies Inc.
International Light Technologies, Inc.
|
| S3921 S3921-512Q S3921-128Q |
NMOS linear image sensor Voltage output type with current-integration readout circuit and impedance conversion circuit
MOSFET, Switching; VDSS (V): 500; ID (A): 12; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.515; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1100; toff (µs) typ: 0.077; Package: TO-220FN
|
Hamamatsu Photonics
|
| 1R5JZ41 1R5NZ41 |
Rectifier Silicon Diffused Type
|
TOSHIBA
|
| SM12CXC220 SM34CXC614 SM36CXC604 SM38CXC624 SM38CX |
860 A, 1200 V, SILICON, RECTIFIER DIODE
1160 A, 3400 V, SILICON, RECTIFIER DIODE
1010 A, 3600 V, SILICON, RECTIFIER DIODE
1106 A, 3800 V, SILICON, RECTIFIER DIODE
2640 A, 3800 V, SILICON, RECTIFIER DIODE
1106 A, 3400 V, SILICON, RECTIFIER DIODE
435 A, 1500 V, SILICON, RECTIFIER DIODE
440 A, 600 V, SILICON, RECTIFIER DIODE
1160 A, 3800 V, SILICON, RECTIFIER DIODE
1160 A, 4200 V, SILICON, RECTIFIER DIODE
940 A, 800 V, SILICON, RECTIFIER DIODE
940 A, 1800 V, SILICON, RECTIFIER DIODE
940 A, 400 V, SILICON, RECTIFIER DIODE
940 A, 1000 V, SILICON, RECTIFIER DIODE
940 A, 600 V, SILICON, RECTIFIER DIODE
940 A, 1600 V, SILICON, RECTIFIER DIODE
1106 A, 4000 V, SILICON, RECTIFIER DIODE
310 A, 2600 V, SILICON, RECTIFIER DIODE
370 A, 2600 V, SILICON, RECTIFIER DIODE
2700 A, 2600 V, SILICON, RECTIFIER DIODE
860 A, 1400 V, SILICON, RECTIFIER DIODE
440 A, 400 V, SILICON, RECTIFIER DIODE
440 A, 800 V, SILICON, RECTIFIER DIODE
435 A, 1600 V, SILICON, RECTIFIER DIODE
435 A, 1800 V, SILICON, RECTIFIER DIODE
527 A, 3200 V, SILICON, RECTIFIER DIODE
|
WESTCODE SEMICONDUCTORS LTD
|
| 5THZ52 |
RECTIFIER SILICON DIFFUSED TYPE HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV (DAMPER-diode)
rectifier diode
|
TOSHIBA
N/A
|
| 2N2323 JANTX2N2323 JANTX2N2323A JANTX2N2323AS JANT |
SILICON CONTROLLED RECTIFIER
SILICON CONTROLLED RECTIFIER 0.3454 A, 200 V, SCR, TO-5
SILICON CONTROLLED RECTIFIER 1.6 A, 200 V, SCR, TO-205AD
LED RED DIFFUSED 1.8X3.5MM RECT SCR, TO-39
|
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
|
| DSA26 DSA26G |
Diffused Junction Type Silicon Diode 2.6A Power Rectifier
|
SANYO
|
|
