PART |
Description |
Maker |
TC58NYG1S3EBAI5 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 GBIT (256M × 8 BIT) CMOS NAND E2PROM
|
Toshiba Semiconductor
|
TC58NVG5T2HTA00 |
32 GBIT (4G X 8 BIT) CMOS NAND E2PROM
|
Toshiba
|
NAND01G-B |
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
|
STMicroelectronics
|
TC58NS256BDC |
256 MBit CMOS NAND EPROM
|
Toshiba
|
TC58NS128BDC |
128 MBit CMOS NAND EPROM
|
Toshiba
|
TC58128FTI |
128M-Bit CMOS NAND EPROM
|
Toshiba Semiconductor
|
TC58V64DC |
16M-Bit CMOS NAND EPROM
|
Toshiba Semiconductor
|
TC58DVM92A1FT0 |
512M-Bit CMOS NAND EPROM
|
Toshiba
|
NAND02GR3B2BZA1 NAND02GR4B2BZA6 NAND02GR3B2BZB1 NA |
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 1千兆千兆位,2112 Byte/1056字的页面.8V/3V,NAND闪存 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 1千兆千兆位,2112 Byte/1056字的页面1.8V/3V,NAND闪存
|
意法半导 STMicroelectronics N.V.
|
TH58NS100DC |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 - GBIT (128M X 8 BITS) CMOS NAND E2PROM ( 128M BYTE SmartMediaTM )
|
Toshiba Semiconductor
|
CY27H512-30JC CY27H512-30WC CY27H512-35HC CY27H512 |
64K x 8 High-Speed CMOS EPROM 64K x 8 High-Speed CMOS EPROM 64K X 8 OTPROM, 25 ns, PDSO28 64K x 8 High-Speed CMOS EPROM 64K X 8 OTPROM, 55 ns, PDSO28 64K x 8 High-Speed CMOS EPROM 64K X 8 OTPROM, 30 ns, PDIP28 64K x 8 High-Speed CMOS EPROM 64K X 8 UVPROM, 55 ns, CDIP28 64K x 8 High-Speed CMOS EPROM 64K X 8 UVPROM, 45 ns, CDIP28 64K x 8 High-Speed CMOS EPROM 64K X 8 OTPROM, 55 ns, CDIP28 64K x 8 High-Speed CMOS EPROM 64K X 8 UVPROM, 45 ns, CQCC32 64K x 8 High-Speed CMOS EPROM 64K X 8 OTPROM, 70 ns, PDIP28 64K x 8 High-Speed CMOS EPROM 64K X 8 OTPROM, 70 ns, PQCC32 64K x 8 High-Speed CMOS EPROM 64K X 8 UVPROM, 70 ns, CQCC32 64K x 8 High-Speed CMOS EPROM 64K X 8 OTPROM, 70 ns, PDSO28 CAP SM CER 2200PFD 50V 10% X7R 0805
|
Cypress Semiconductor, Corp. Cypress Semiconductor Corp. CYPRESS[Cypress Semiconductor]
|
H27U1G8F2B |
1 Gbit (128 M x 8 bit) NAND Flash
|
Hynix
|
|