| PART |
Description |
Maker |
| RA03M3540MD RA03M3540MD10 RA03M3540MD-101 |
RoHS Compliance , 350-400MHz 38dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO
350 MHz - 400 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
Mitsubishi Electric Semiconductor
|
| 2N5015 |
0.5 AMP, 1000 Volts NPN Transistor
|
Solid States Devices, Inc
|
| SFT4300 |
2 AMP 150 VOLTS NPN TRANSISTOR
|
SOLID STATE DEVICES INC
|
| SFT3997 |
10 AMP HIGH SPEED NPN TRANSISTOR 100 VOLTS
|
SSDI[Solid States Devices, Inc]
|
| SFT5666-39 |
5 AMP 180 VOLTS HIGH SPEED NPN TRANSISTOR
|
Solid States Devices, Inc.
|
| 2N5006 2N5008 |
10 AMP HIGH SPEED NPN TRANSISTOR 100 VOLTS
|
Solid States Devices, Inc
|
| 2N4300 |
2 AMP HIGH SPEED NPN TRANSISTOR 100 VOLTS
|
Solid States Devices, Inc
|
| SFT5004JUB SFT5002 SFT5002_59 SFT5002J SFT5002JDB |
10 AMP 150 VOLTS NPN HIGH SPEED POWER TRANSISTOR
|
SSDI[Solid States Devices, Inc]
|
| SFT1618 |
10 AMP EAST SWITCHING HIGH VOLTAGE NPN TRANSISTOR 1500 VOLTS
|
SSDI[Solid States Devices, Inc]
|
| CM350DU-5F |
Trench Gate Design Dual IGBTMOD 350 Amperes/250 Volts
Trench Gate Design Dual IGBTMOD⑩ 350 Amperes/250 Volts
Trench Gate Design Dual IGBTMOD350 Amperes/250 Volts
|
POWEREX[Powerex Power Semiconductors]
|
