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NAND01G-B2B - (NAND0xG-B2x) NAND Flash Memory

NAND01G-B2B_44803.PDF Datasheet


 Full text search : (NAND0xG-B2x) NAND Flash Memory
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 Related Part Number
PART Description Maker
K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-DCB0 K9F5608Q0C 32M x 8 Bit NAND Flash Memory
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
512Mb/256Mb 1.8V NAND Flash Errata
Samsung Electronic
SAMSUNG[Samsung semiconductor]
K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
512Mb/256Mb 1.8V NAND Flash Errata
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
Samsung Electronic
SAMSUNG[Samsung semiconductor]
K9F4008W0A K9F4008W0A- K9F4008W0A-TCB0 K9F4008W0A- 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
512K x 8 bit NAND Flash Memory
Samsung Electronic
SAMSUNG[Samsung semiconductor]
K9WAG08U1A-I K9WAG08U1A-Y K9NBG08U5A K9NBG08U5A-P 2G X 8 FLASH 2.7V PROM, 20 ns, PDSO48
4G X 8 FLASH 2.7V PROM, 30 ns, PDSO48 12 X 20 MM, 0.50 MM PITCH, LEAD FREE, PLASTIC, TSOP1-48
1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory
   1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory
SEMIKRON
http://
Samsung semiconductor
HY27UF082G2B HY27UF162G2B HY27UF082G2B-F 2Gb NAND FLASH
256M X 8 FLASH 3.3V PROM, PBGA63
HYNIX SEMICONDUCTOR INC
K9F5608U0C-VIB0 K9F5608Q0C-HIB0 K9F5608U0C-HIB0 K9 TV 3C 3#20 PIN WALL RECP 512Mb/256Mb 1.8 NAND闪存勘误
512Mb/256Mb 1.8V NAND Flash Errata 512Mb/256Mb 1.8 NAND闪存勘误
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
http://
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
CY7C68034-56LFXC CY7C68033-56LFXC EZ-USB NX2LP-Flex Flexible USB NAND Flash Controller
EZ-USB NX2LP-FlexFlexible USB NAND Flash Controller
Cypress Semiconductor Corp.
NAND256-A NAND01G-A NAND01GW3A2AZB1 NAND01GW3A0AZB 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆,256兆,512兆位千兆位(x8/x1628 Byte/264字的页面.8V/3V,NAND闪存芯片
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆,256兆,512兆位1千兆位(x8/x1628 Byte/264字的页面1.8V/3V,NAND闪存芯片
128M X 8 FLASH 1.8V PROM, 35 ns, PBGA63
8M X 16 FLASH 1.8V PROM, 35 ns, PDSO48
64M X 8 FLASH 3V PROM, 35 ns, PBGA55
64M X 16 FLASH 1.8V PROM, 35 ns, PDSO48
128M X 8 FLASH 3V PROM, 35 ns, PDSO48
8M X 16 FLASH 3V PROM, 35 ns, PDSO48
32M X 16 FLASH 3V PROM, 35 ns, PDSO48
32M X 16 FLASH 3V PROM, 35 ns, PBGA55
ST Microelectronics
意法半导
STMicroelectronics N.V.
NUMONYX
http://
LPC3230FET296 ARM926EJ-S with 256 kB SRAM, USB High-speed OTG, SD-MMC, NAND flash controller, LCD controller 32-BIT, FLASH, 266 MHz, RISC MICROCONTROLLER, PBGA296
NXP Semiconductors N.V.
LPC3200 LPC3220FET296 LPC3240FET296 16/32-bit ARM microcontrollers
ARM926EJ-S with 128 kB SRAM, USB High-speed OTG, SD/MMC, NAND flash controller
ARM926EJ-S with 256 kB SRAM, USB High-speed OTG, SD/MMC, NAND flash controller, Ethernet
NXP Semiconductors N.V.
TC58DVM82A1XBJ1 Flash - NAND
TOSHIBA
AT49F8192 AT49F8192- AT49F8192T-90TI AT49F8192-12R 8-Megabit 512K x 16 5-volt Only CMOS Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO48
8-Megabit 512K x 16 5-volt Only CMOS Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO44
Quadruple 2-Input Positive-NAND Gate 14-TSSOP -40 to 125
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
 
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NAND01G-B2B 替换表 NAND01G-B2B fet NAND01G-B2B Specification NAND01G-B2B Precision NAND01G-B2B toshiba
 

 

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