| PART |
Description |
Maker |
| MTB2P50E_D ON2408 MTB2P50E MTB2P50E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount P-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 2.0 AMPERES 500 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTP2N50E |
TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 3.6 OHM
|
Motorola, Inc
|
| MTY20N50E_D ON2714 |
TMOS POWER FET 20 AMPERES 500 VOLTS
From old datasheet system
|
ON Semi
|
| MTP2P50 MTP2P50E ON2583 |
From old datasheet system
TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 6.0 OHM
|
MOTOROLA[Motorola, Inc]
|
| MRF275G MRF275 |
N-CHANNEL MOS BROADBAND 100 . 500 MHz RF POWER FET
|
MACOM[Tyco Electronics]
|
| MTE30N50E ON2533 MTE30N50E_D |
N?Channel Enhancement?Mode Silicon Gate
From old datasheet system
TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.150 OHM
|
ON Semi
Motorola, Inc
|
| MMFT5P03HD ON2230 MMFT5P03HDT3 ON2229 |
TMOS MEDIUM POWER FET 5.2 AMPERES 30 VOLTS
From old datasheet system
TMOS P-CHANNEL FIELD FEECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
| MGSF3454VT1 MGSF3454VT1_D ON1906 MGSF3454VT1-D ON1 |
Low Rds(on) Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors
N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
MOTOROLA INC
|
| MTP3N120E_D ON2600 MTP3N120E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 3.0 AMPERES 1200 VOLTS
|
ON Semiconductor
|
| MTP16N25E MTP16N25E_D ON2556 MTP16N25E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 16 AMPERES 250 VOLTS RDS(on) = 0.25 OHM
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
