| PART |
Description |
Maker |
| 1N4748A 1N4732A 1N4758A 1N4745A 1N4754A 1N4744A 1N |
Silicon Power Z-Diode for Voltage Stabilization(稳定电压22V，稳定电1.5mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电2V的，稳定电流一十一点五毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压3.9V，稳定电4mA的硅功率齐纳二极 硅功Z -二极管的电压稳定（稳定电压均.9V，稳定电流六十四毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压16V，稳定电5.5mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电6V的稳定电流一十五点五毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压9.1V，稳定电8mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电.1V，稳定电8毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压12V，稳定电1mA的硅功率齐纳二极 硅功率Z -二极管的稳定电压12V的稳定电压，稳定电流21毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压75V，稳定电.3mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电5V的，稳定电流三点三毫安的硅功率齐纳二极管
Silicon Power Z-Diodes 硅功率Z -二极
Silicon Power Z-Diode for Voltage Stabilization(稳定电压13V，稳定电9mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电3V的，稳定电流十九毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压20V，稳定电2.5mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电0V的，稳定电流十二点五毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压8.2V，稳定电1mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电.2V，稳定电流三一毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压6.2V，稳定电1mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电.2V，稳定电1毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压3.6V，稳定电9mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电.6V的稳定电9毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压4.7V，稳定电3mA的硅功率齐纳二极
Silicon Power Z-Diode for Voltage Stabilization(稳定电压5.1V，稳定电9mA的硅功率齐纳二极
From old datasheet system
Silicon Power Z?Diodes
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
TFUNK[Vishay Telefunken]
|
| 2N6504G 2N650406 2N6667G 2N666705 2N6509TG 2N6504 |
Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 25 AMPERES RMS 50 thru 800 VOLTS
Darlington Silicon Power Transistors PNP SILICON DARLINGTON POWER TRANSISTORS 10 A, 60?80 V, 65 W
|
ONSEMI[ON Semiconductor]
|
| 1N2439 1N1399 1N3296 1N2431 1N2433 1N2434 1N2435 R |
Silicon Power Rectifier 125 A, 400 V, SILICON, RECTIFIER DIODE, DO-205AA
Silicon Power Rectifier 125 A, 1200 V, SILICON, RECTIFIER DIODE, DO-205AA
Silicon Power Rectifier 100 A, 300 V, SILICON, RECTIFIER DIODE, DO-205AA
Silicon Power Rectifier 100 A, 200 V, SILICON, RECTIFIER DIODE, DO-205AA
Silicon Power Rectifier
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| MJ3281A NH1302A |
15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 250 WATTS
COMEPLEMENTARY NPN-PNP SILICON POWER BOPOLAR TRANSISTOR
|
Motorola Inc
MOTOROLA[Motorola, Inc]
|
| PBY277 1N1199A 1N1200A 1N1202A 1N1204A 1N1206A 1N3 |
Silicon-Power Rectifiers
Silicon-Power Rectifiers 12 A, 200 V, SILICON, RECTIFIER DIODE, DO-4
Silicon-Power Rectifiers 12 A, 800 V, SILICON, RECTIFIER DIODE, DO-4
Replacement with:PBY272R
|
Diotec Semiconductor AG
DIOTEC[Diotec Semiconductor]
Diotec Elektronische
|
| 2N5655 2N5656 2N5657 |
Power 1A 350V NPN
POWER TRANSISTORS NPN SILICON
Plastic NPN Silicon High-Voltage Power Transistor
|
ONSEMI[ON Semiconductor]
|
| MJ15003 MJ15004 ON1980 |
From old datasheet system
20 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 140 VOLTS 250 WATTS
POWER TRANSISTORS COMPLEMENTARY SILICON 20 A, 140 V, PNP, Si, POWER TRANSISTOR, TO-204AA
|
MOTOROLA INC
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| MIG100J7CSB1W |
MINIATURE POWER RELAY 东芝智能功率模块IGBT的硅频道
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 2SB1431 |
Silicon power transistor
From old datasheet system
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
|
NEC[NEC]
|
| M68732HA 68732HA |
SILICON MOS FET POWER AMPLIFIER, 440-490MHz, 7W, FM PORTABLE 硅场效应晶体管功率放大器40 - 490MHz的，7瓦，调频便携
From old datasheet system
Silicon MOS FET Power Amplifier, 440-490MHz, 7W FM PORTABLE
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 440-490 MHz 7W FM PORTABLE
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| 2N6388 2N6387 |
DARLINGTON NPN SILICON POWER TRANSISTORS
Plastic Medium-Power Silicon Transistors
|
ONSEMI[ON Semiconductor]
|
| MAX7384B MAX7384CRVT MAX7384CRVB MAX7384CMUK MAX73 |
11.0592 MHz, 2.7 V to 5.5 V, silicon oscillator with low-power frequency switching and reset output
12 MHz, 2.7 V to 5.5 V, silicon oscillator with low-power frequency switching and reset output
Replaced by SN54197 : 50/30/100-Mhz Presettable Decade OR Binary Counters/Latches 14-CDIP -55 to 125 硅振荡器的低功耗高频开关和复位输出
14.7456 MHz, 2.7 V to 5.5 V, silicon oscillator with low-power frequency switching and reset output
10 MHz, 2.7 V to 5.5 V, silicon oscillator with low-power frequency switching and reset output
|
Maxim Integrated Products, Inc.
MAXIM - Dallas Semiconductor
|
