| PART |
Description |
Maker |
| 4N90L-TA3-T 4N90G-TA3-T |
4 Amps, 900 Volts N-CHANNEL MOSFET
|
Unisonic Technologies
|
| 8N90G-TA3-T |
8 Amps, 900 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| 1N90 1N90L-TA3-T 1N90L-TF1-T 1N90G-TA3-T 1N90G-TF1 |
1 Amps, 900 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| NTMD6P02R2 NTMD6P02R2-D NTMD6P02 |
Power MOSFET 6 Amps, 20 Volts P?Channel SO, Dual(6A0V，双P沟道SO-8封装的功率MOSFET)
Power MOSFET 6 Amps, 20 Volts P-Channel SO-8, Dual
|
ONSEMI[ON Semiconductor]
|
| NTD24N06L NTD24N06L-1 NTD24N06L-1G NTD24N06LG NTD2 |
Power MOSFET 24 Amps, 60 Volts, Logic Level N-Channel DPAK; Package: DPAK 4 LEAD Single Gauge Surface Mount; No of Pins: 4; Container: Tape and Reel; Qty per Container: 2500 24 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOSFET 24Amps, 60Volts Logic Level N-Channel DPAK(24A, 60 V，逻辑电平，N通道，DPAK封装的功率MOSFET)
Power MOSFET 24 Amps, 60 Volts Logic Level, N−Channel DPAK
|
ON Semiconductor
|
| CM900HB-90H |
Single IGBTMOD?/a> HVIGBT 900 Amperes/4500 Volts
Single IGBTMOD⑩ HVIGBT 900 Amperes/4500 Volts
Single IGBTMODHVIGBT 900 Amperes/4500 Volts
Single IGBTMOD HVIGBT 900 Amperes/4500 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| NTD4302 NTD4302T4 NTD4302-1 |
Power MOSFET 68 Amps / 30 Volts(N-Channel DPAK)
Power MOSFET 68 Amps, 30 Volts(N−Channel DPAK)
Power MOSFET 68 Amps, 30 Volts(N-Channel DPAK)
|
ONSEMI[ON Semiconductor]
|
| MMDFS3P303 MMDFS3P303R2 MMDFS3P303-D |
Power MOSFET 3 Amps / 30 Volts
Power MOSFET 3 Amps, 30 Volts P-Channel SO-8, FETKY
|
ONSEMI[ON Semiconductor]
|
| MMDF3N03HDR2 MMDF3N03HD MMDF3N03HD-D |
Power MOSFET 3 Amps, 30 Volts 4.1 A, 30 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOSFET 3 Amps, 30 Volts N-Channel SO-8, Dual
|
ONSEMI[ON Semiconductor]
|
| NTB23N03RT4G NTB23N03R NTB23N03RG NTB23N03RT4 |
Power MOSFET 23 Amps, 25 Volts N−Channel D2PAK 6 A, 25 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOSFET 23 Amps, 25 Volts N−Channel D2PAK
|
ONSEMI[ON Semiconductor]
|
