| PART |
Description |
Maker |
| SGP30N60HS |
HIGHT SPEED IGBT CHIP IN NPT-TECHNOLOGY HIGHT高速IGBT的芯片在不扩散核武器条约技
|
Infineon Technologies AG
|
| SGB15N60HS Q67040-S4535 |
High Speed IGBT in NPT-technology
|
INFINEON[Infineon Technologies AG]
|
| SKB06N60HS |
High Speed IGBT in NPT-technology
|
INFINEON[Infineon Technologies AG]
|
| SIGC25T60SNC |
IGBT Chip in NPT-technology 600V NPT technology 100μm chip short circuit prove
|
Infineon Technologies AG
|
| SIGC144T170R2C SIGC144T170R2C09 |
IGBT Chip in NPT-technology 1700V NPT technology 280 μm chip
|
Infineon Technologies AG
|
| HGTP10N120BN HGTG10N120BN HGT1S10N120BNS HGT1S10N1 |
1200V, NPT Series N-Channel IGBT; Package: TO-263(D2PAK); No of Pins: 2; Container: Tape & Reel 35 A, 1200 V, N-CHANNEL IGBT, TO-263AB
35A/ 1200V/ NPT Series N-Channel IGBT
35A, 1200V, NPT Series N-Channel IGBT
35 A, 1200 V, NPT N-Channel IGBT
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| HGT1S11N120CNS HGTP11N120CN HGTG11N120CN HGT1S11N1 |
43A, 1200V, NPT Series N-Channel IGBT 43 A, 1200 V, N-CHANNEL IGBT, TO-263AB
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 3300uF; Voltage: 25V; Case Size: 16x25 mm; Packaging: Bulk 43 A, 1200 V, N-CHANNEL IGBT, TO-220AB
43A/ 1200V/ NPT Series N-Channel IGBT
43A 1200V NPT Series N-Channel IGBT
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IXDA20N120AS |
IGBT Discretes: NPT IGBT
High Voltage IGBT
|
IXYS
|
| SIGC25T120CS2 |
IGBT Chip in NPT-technology
|
Infineon Technologies AG
|
| SIGC185T170R2C Q67041-A4697-A001 |
IGBT Chip in NPT-technology
|
INFINEON[Infineon Technologies AG]
|
