| PART |
Description |
Maker |
| FD1000FV-90 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| FD1000FX-90 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
|
Mitsubishi Electric Corporation
|
| 2SC941 2SC941-O 2SC941-R 2SC941TM 2SC941-Y 2SC942 |
TRANSISTOR SILICON NPN EPIITAXIAL TYPE 晶体管型硅npn型EPIITAXIAL
SMA MALE TO TNC MALE; 18GHz PRECISION TEST CABLE ASSEMBLY; WIDEBAND COVERAGE DC - 18 GHZ TEST CABLES. FLEXIBLE FOR EASY CONNECTION AND BEND RADIUS
NPN EPITAXIAL TYPE (HIGH/ AM/ AM HIGH FREQUENCY AMPLIFIER CONVERTER APPLICATIONS)
NPN EPITAXIAL TYPE (HIGH, AM, AM HIGH FREQUENCY AMPLIFIER CONVERTER APPLICATIONS)
From old datasheet system
|
Toshiba, Corp.
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 2SK709 |
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications
|
TOSHIBA
|
| 2SC5384 2SC5384-10 |
For High Frequency Amplify, Medium Frequency Amplify Application Silicon NPN Epitaxial Type Ultra Super Mini
|
Isahaya Electronics Corpora...
|
| FD3000AU-120DA |
HIGH POWER, HIGH FREQUENCY PRESS PACK TYPE 高功率，高频率新闻袋
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Semiconductor
|
| HKQ0603S1N4S-T-19 |
High-Q Multilayer Chip Inductors for High Frequency Applications (HK series Q type)[HKQ-S]
|
Taiyo Yuden (U.S.A.), I...
|
| HKQ0603W1N1S-T-19 |
High-Q Multilayer Chip Inductors for High Frequency Applications (HK series Q type)[HKQ-W]
|
Taiyo Yuden (U.S.A.), I...
|
| ENH ERH |
Military/Established Reliability, MIL-R-39009 Qualified, Type RER, R Level, Aluminum Housed, Standard (ERH) or Non-inductive (ENH) Winding, Complete Environmental Protection
|
Vishay
|
| HTT1213S |
High Frequency Amplifiers(Twin Type)
|
Hitachi Semiconductor
|
| HTT1115S |
High Frequency Amplifiers(Twin Type)
|
Hitachi Semiconductor
|
