| PART |
Description |
Maker |
| HY5DU56822AF HY5DU56422AF-J HY5DU561622AF HY5DU564 |
32M X 8 DDR DRAM, 0.7 ns, PBGA60 DDR SDRAM - 256Mb 64Mx4|2.5V|8K|J/M/K/H/L|DDR SDRAM - 256M 16Mx16|2.5V|8K|J/M/K/H/L|DDR SDRAM - 256M
|
HYNIX SEMICONDUCTOR INC
|
| HY5DU56422AT HY5DU56422ALT HY5DU561622AT |
64Mx4|2.5V|8K|J/M/K/H/L|DDR SDRAM - 256M 64Mx4 |.5V | 8K的|焦九龙/升| DDR SDRAM内存- 256M 16Mx16|2.5V|8K|J/M/K/H/L|DDR SDRAM - 256M 16Mx16显示|.5V | 8K的|焦九龙/升| DDR SDRAM内存- 256M
|
Hynix Semiconductor, Inc.
|
| HM5425161BTT-10 HM5425401BTT-10 HM5425801BTT-10 HM |
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank/ 16-Mword 4-bit 4-bank 16M X 16 DDR DRAM, 0.75 ns, PDSO66 256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank/ 16-Mword 4-bit 4-bank 64M X 4 DDR DRAM, 0.75 ns, PDSO66 256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank/ 16-Mword 4-bit 4-bank 256M SSTL_2 DDR SDRAM的接43 MHz/133 MHz/125 MHz/100 MHz Mword6位-bank/8-Mword位银行/ 16 Mword位 -银行 256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword × 16-bit × 4-bank/8-Mword × 8-bit × 4-bank/ 16-Mword × 4-bit × 4-bank
|
Elpida Memory, Inc.
|
| MT46H256M32LGCM-5A MT46H256M32L4CM-6A MT46H256M32L |
256M X 32 DDR DRAM, 5 ns, PBGA90 128M X 32 DDR DRAM, 5 ns, PBGA168
|
|
| K4H1G0438A-UCB30 K4H1G0838A-UCB00 |
256M X 4 DDR DRAM, 0.7 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66 128M X 8 DDR DRAM, 0.75 ns, PDSO66
|
Cypress Semiconductor, Corp.
|
| EDD2516AETA-6B-E EDD2508AETA-6B-E EDD2508AETA-5B-E |
256M bits DDR SDRAM
|
Elpida Memory, Inc. ELPIDA MEMORY INC
|
| EDD2508AMTA-6B EDD2516AMTA-6B EDD2508AMTA-7A EDD25 |
256M bits DDR SDRAM
|
Elpida Memory
|
| EDD2516AMTA-6B-E |
256M bits DDR SDRAM
|
Elpida Memory
|
| HY5DU56822CT HY5DU561622CT |
(HY5DU56xx22CT) 256M-P DDR SDRAM
|
Hynix Semiconductor
|
| EBJ21EE8BAWA-DG-E |
256M X 72 DDR DRAM MODULE, DMA240
|
ELPIDA MEMORY INC
|
| W3EG2128M64ETSR335JD3MG |
256M X 64 DDR DRAM MODULE, 0.7 ns, DMA184
|
MICROSEMI CORP-PMG MICROELECTRONICS
|
| HMT351R7BFR8A-H9 |
256M X 72 DDR DRAM MODULE, DMA240
|
HYNIX SEMICONDUCTOR INC
|