| PART |
Description |
Maker |
| SGW20N60 Q67040-S4236 Q67041-A4712-A2 Q67041-A4712 |
Fast S-IGBT in NPT-technology
Fast S-IGBT in NPT-technology 快速的S -不扩散核武器条约IGBT的技
Fast S-IGBT in NPT-technology( NPT ???涓??蹇??S-IGBT)
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
SIEMENS A G
|
| IXDP20N60BD1 IXDP20N60B |
IGBT Discretes: NPT IGBT
High Voltage IGBT with optional Diode
|
IXYS[IXYS Corporation]
|
| SGW25N120 |
IGBTs & DuoPacks - 25A 1200V TO247AC IGBT
Fast IGBT in NPT-technology
TRANSISTOR,IGBT,N-CHAN,1.2KV V(BR)CES,49A I(C),TO-247AC
|
INFINEON[Infineon Technologies AG]
|
| IXDA20N120AS |
IGBT Discretes: NPT IGBT
High Voltage IGBT
|
IXYS
|
| SIGC81T60SNC |
IGBT Chip in NPT-technology 600V NPT technology positive temperature coefficient
|
Infineon Technologies AG
|
| HGTP1N120BN HGTD1N120BNS HGTD1N120BNS9A |
5.3A, 1200V, NPT Series N-Channel IGBT
5.3A, 1200V, NPT Series N-Channel IGBT 5.3 A, 1200 V, N-CHANNEL IGBT, TO-252AA
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 2.7A I(C) | TO-252AA 5.3 A, 1200 V, N-CHANNEL IGBT, TO-252AA
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| SGB15N120 |
Fast S-IGBT in NPT-technology( NPT技术中的快S-IGBT) 快速的S -不扩散核武器条约IGBT的技术（不扩散技术中的快速第S - IGBT的）
|
SIEMENS AG
|
| FGL40N120ANDTUNL |
1200V NPT IGBT 64 A, 1200 V, N-CHANNEL IGBT, TO-264AA
|
Fairchild Semiconductor, Corp.
|
| 40MT120UHAPBF-13 |
Half Bridge IGBT MTP (Ultrafast NPT IGBT), 80 A
|
Vishay Siliconix
|
| 20MT120UF |
FULL-BRIDGE IGBT MTP UltraFast NPT IGBT
|
International Rectifier
|
| FGL40N120ANTU |
1200V NPT IGBT; Package: TO-264; No of Pins: 3; Container: Rail 64 A, 1200 V, N-CHANNEL IGBT, TO-264AA
|
Fairchild Semiconductor, Corp.
|
| 20MT120UF 20MT120UFPBF |
40 A, 1200 V, N-CHANNEL IGBT MTP, 18 PIN
UltraFast NPT IGBT
1200V UltraFast 10-30 kHz Full-Bridge IGBT in a MTP package
|
Vishay Semiconductors
IRF[International Rectifier]
|
