| PART |
Description |
Maker |
| TC58DVM92A1FT00 TC58DVM92A1FT |
Flash - NAND
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
Toshiba Semiconductor
|
| T0-4-8213/EZ T0-1-102/EA/SVB T0-1-102/V/SVB T0-4-1 |
SWITCH DISCONNECTOR 100A
ISOLATOR 6P 100A
ISOLATOR 6P 63A
ISOLATOR FLUSH 25A 3 POLE
ISOLATOR 3P 63A
ISOLATOR INT＇LOCK 63A 1 POLE
ISOLATOR FLUSH 63A 2 POLE
ISOLATOR FLUSH 63A 1 POLE
ISOLATOR INT＇LOCK 63A 2 POLE
ISOLATOR INT＇LOCK 63A 3 POLE
MCU CMOS 44 LD 20MHZ 8K FLASH, -40C to 85C, 44-PLCC, TUBE
ISOLATOR FLUSH 63A 3 POLE
ISOLATOR EXT SHAFT
ISOLATOR 32A INT
隔离页第32A
隔离页第63A
ISOLATOR 3P 25A 隔离P 25A
MCU CMOS 40 LD 20MHZ 8K FLASH, -40C to 85C, 40-PDIP, TUBE 隔离3P 32A
Transient Voltage Suppressor Diodes 隔离器镶入第32A 1
|
TVS-瞬态抑制二极管
Amphenol Corporation
Astrodyne, Inc.
Moeller Electric, Corp.
|
| K9F1G08Q0M-PCB0 K9F1G08Q0M-PIB0 K9F1G08Q0M-YCB0 K9 |
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
1Gb Gb 1.8V NAND Flash Errata
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| CY7C68034-56LTXC CY7C6803309 CY7C68034-56LFXC |
EZ-USB NX2LP-FlexFlexible USB NAND Flash Controller FLASH MEMORY DRIVE CONTROLLER, QCC56
EZ-USB NX2LP-Flex Flexible USB NAND Flash Controller
|
Cypress Semiconductor, Corp.
|
| KM29W8000IT |
1M x 8 Bit NAND Flash Memory(1M x 8 浣?NAND???瀛???ī
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| TC58NS256DC |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT (32M ?8 BITS) CMOS NAND E2PROM (32M BYTE SmartMediaTM)
|
TOSHIBA[Toshiba Semiconductor]
|
| MT29F8G08DAAWCA MT29F8G08BAAWPA |
4Gb, 8Gb, and 16Gb x8 NAND Flash Memory
1G X 8 FLASH 2.7V PROM, 30 ns, PDSO48
|
Micron Technology
|
| HY27UH08AG5M HY27UH08AGDM HY27UH08AGDM-MPEB |
16Gbit (2Gx8bit) NAND Flash
2G X 8 FLASH 3.3V PROM, 25 ns, PBGA52 12 X 17 MM, 1 MM HEIGHT, LEAD FREE, TLGA-52
|
Hynix Semiconductor, Inc.
|
| TH58NS100DC |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 - GBIT (128M X 8 BITS) CMOS NAND E2PROM ( 128M BYTE SmartMediaTM )
|
Toshiba Semiconductor
|
| GA250TD120U |
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a Dual INT-A-Pak package
HALF-BRIDGE IGBT INT-A-PAK Ultra-FastTM Speed IGBT
HALF-BRIDGE IGBT DOUBLE INT-A-PAK
|
IRF[International Rectifier]
|
| K9F1608W0A- K9F1608W0A-TCB0 K9F1608W0A-TIB0 K9F1G0 |
-2M x 8 Bit NAND Flash Memory
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
