| PART |
Description |
Maker |
| K9F5608U0M- K9F5608U0M-YCB0 K9F5608U0M-YIB0 |
From old datasheet system
EEPROM,NAND FLASH,33MX8,CMOS,TSSOP,48PIN,PLASTIC
32M x 8 Bit NAND Flash Memory
|
Samsung Electronics Inc
SAMSUNG[Samsung semiconductor]
|
| K9F1G08Q0M-PCB0 K9F1G08Q0M-PIB0 K9F1G08Q0M-YCB0 K9 |
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
1Gb Gb 1.8V NAND Flash Errata
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| TC58NYG1S3EBAI5 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 GBIT (256M × 8 BIT) CMOS NAND E2PROM
|
Toshiba Semiconductor
|
| AM3064-70/BZC AM3064-50GI175 AM3064-50JC068 AM3090 |
10MS, 8 EIAJ SOIC, IND TEMP, GREEN, 2.7V(BIOS FLASH)
10MS, 8 SOIC, IND TEMP, GREEN, 2.7V(BIOS FLASH)
DIE SALE, 2.7V, 7 MIL(BIOS FLASH)
10MS, 8 SAP, IND, ROHS-B, 2.7V(BIOS FLASH)
8-SOIC,AUTO TEMP,2.7V(SERIAL EE)
10MS, 8 PDIP, IND TEMP, 2.7V(SERIAL EE)
10MS, 8 PDIP, EXT TEMP, GREEN,2.7V(SERIAL EE)
10MS, 8 TSSOP, INT TEMP, GREEN, 1.8V(SERIAL EE)
10MS, 8 PDIP, INT TEMP, GREEN, 2.7V(SERIAL EE)
10MS, DIE 1.8V, 11 MILS THICKNESS(SERIAL EE)
10MS, 8 PDIP, IND TEMP, GREEN, 2.7V(SERIAL EE)
10MS, 8 PDIP, IND TEMP, GREEN,2.7V(SERIAL EE)
8 ULTRA THIN,MINI MAP,PB/HALO FREE,IND T(SERIAL EE) 现场可编程门阵列（FPGA
10MS, 8 SOIC, EXT TEMP, GREEN, 2.7V(SERIAL EE) 现场可编程门阵列（FPGA
Field Programmable Gate Array (FPGA) 现场可编程门阵列（FPGA
10MS, 8 SOIC, INT TEMP, GREEN, 2.7V(SERIAL EE) 现场可编程门阵列（FPGA
10MS, 8 PDIP, EXT TEMP, GREEN, 2.7V(SERIAL EE)
|
Stackpole Electronics, Inc.
Ecliptek, Corp.
Analog Devices, Inc.
Glenair, Inc.
|
| AT49F8011-70CI AT49F8011-90CI AT49F8011T-90CC AT49 |
ATS-SSK 0525/110
Quadruple 2-Input Positive-NAND Gate 14-SO -40 to 85
Quadruple 2-Input Positive-NAND Gate 14-SOIC -40 to 125
Quadruple 2-Input Positive-NAND Gate 14-TSSOP -40 to 125
8-megabit (512K x 16/ 1M x 8) 5-volt Only Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PBGA48
8-megabit (512K x 16/ 1M x 8) 5-volt Only Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO48
|
Atmel Corp.
Atmel, Corp.
|
| HY27UF081G2A HY27UF161G2A-TPCS HY27UF161G2A-TPCB |
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
64M X 16 FLASH 3.3V PROM, 25000 ns, PDSO48
|
HYNIX SEMICONDUCTOR INC
|
| HY27UH08AG5M HY27UH08AGDM HY27UH08AGDM-MPEB |
16Gbit (2Gx8bit) NAND Flash
2G X 8 FLASH 3.3V PROM, 25 ns, PBGA52 12 X 17 MM, 1 MM HEIGHT, LEAD FREE, TLGA-52
|
Hynix Semiconductor, Inc.
|
| 54MT80KB 54MT100KB 54MT120KB 54MT140KB 54MT160KB 1 |
THREE PHASE AC SWITCH
800V 3 Phase Bridge in a INT-A-Pak package
1000V 3 Phase Bridge in a INT-A-Pak package
1200V 3 Phase Bridge in a INT-A-Pak package
1400V 3 Phase Bridge in a INT-A-Pak package
1600V 3 Phase Bridge in a INT-A-Pak package
|
IRF[International Rectifier]
|
| HY27LF081G2M-TCP HY27LF081G2M-TCS HY27LF161G2M-TCB |
Inductor; Inductor Type:Power; Inductance:2uH; Inductance Tolerance: 25 %; Series:CTX; Package/Case:PCB Surface Mount; Core Material:Amorphous Metal; Current, lt rms Parallel:7.26A; Current, lt rms Series:3.63A RoHS Compliant: Yes
3.3V Differential Transceiver 8-PDIP -40 to 85
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 1Gbit的（128Mx8bit / 64Mx16bit）NAND闪存
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 128M X 8 FLASH 1.8V PROM, 30 ns, PDSO48
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 64M X 16 FLASH 1.8V PROM, 30 ns, PDSO48
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 64M X 16 FLASH 3.3V PROM, 30 ns, PDSO48
CONNECTOR ACCESSORY 128M X 8 FLASH 3.3V PROM, 30 ns, PDSO48
CONNECTOR ACCESSORY 64M X 16 FLASH 1.8V PROM, 30 ns, PDSO48
Power Heater Soldering Tip; Tip/Nozzle Style:Chisel; Tip/Nozzle Thickness:0.2"; Tip/Nozzle Size:0.40 1Gbit的（128Mx8bit / 64Mx16bit）NAND闪存
COILTRONICS RoHS Compliant: Yes 1Gbit的（128Mx8bit / 64Mx16bit）NAND闪存
Power Heater Soldering Tip; Tip/Nozzle Style:Chisel; Tip/Nozzle Thickness:0.1"; Tip/Nozzle Size:0.43 RoHS Compliant: Yes
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| CY7C68034-56LFXC CY7C68033-56LFXC |
EZ-USB NX2LP-Flex Flexible USB NAND Flash Controller
EZ-USB NX2LP-FlexFlexible USB NAND Flash Controller
|
Cypress Semiconductor Corp.
|
|
