| PART |
Description |
Maker |
| GS8170DD36C-333 GS8170DD36C-250 GS8170DD36C-300 GS |
18Mb x2Lp CMOS I/O Double Data Rate SigmaRAM 512K X 36 STANDARD SRAM, 2.1 ns, PBGA209
18Mb 1x2Lp CMOS I/O Double Data Rate SigmaRAM 35.71x2Lp的CMOS的I / O双数据速率SigmaRAM
|
GSI Technology, Inc.
|
| MB81N643289 MB81N643289-50 MB81N643289-60 |
8 x 256K x 32 BIT DOUBLE DATA RATE FCRAMTM
MEMORY 8 x 256K x 32 BIT DOUBLE DATA RATE FCRAM
|
Fujitsu Microelectronics
|
| EM42AM1684RTB EM42AM1684RTB-5F EM42AM1684RTB-6F |
256Mb (4M隆驴4Bank隆驴16) Double DATA RATE SDRAM
256Mb (4M×4Bank×16) Double DATA RATE SDRAM
|
Eorex Corporation
|
| EM42AM1684LBA-75FE EM42AM1684LBA-7FE EM42AM1684LBA |
512Mb (8M】4Bank】16) Double DATA RATE SDRAM
512Mb (8M隆驴4Bank隆驴16) Double DATA RATE SDRAM
|
Eorex Corporation
|
| ADD8616A8A VDD8608A8A-75BA VDD8608A8A ADD8616A8A-7 |
DOUBLE DATA RATE SDRAM
From old datasheet system
DOUBLE DATA RATE SDRAM 双倍数据速率SDRAM内存
|
A-DATA[A-Data Technology]
ADATA Technology Co., Ltd.
|
| NT5DS4M32EG-5 NT5DS4M32EG-5G NT5DS4M32EG-6 |
1M × 32 Bits × 4 Banks Double Data Rate Synchronous RAM With Bi-Directional Data Strobe and DLL
|
NanoAmp Solutions, Inc.
|
| DSK4D263238D K4D263238D K4D263238D-QC40 K4D263238D |
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| W9412G6JH W9412G6JH-5 |
2M ?4 BANKS ?16 BITS DDR SDRAM
Double Data Rate architecture; two data transfers per clock cycle
|
Winbond
|
| W9412G2IB W9412G2IB4 W9412G2IB-6I |
1M × 4 BANKS × 32 BITS GDDR SDRAM
Double Data Rate architecture; two data transfers per clock cycle
4M X 32 DDR DRAM, 0.7 ns, PBGA144
|
Winbond
WINBOND ELECTRONICS CORP
|
| HYB18T512800B2FL-3S HYB18T512400B2F-3.7 |
512-Mbit Double-Data-Rate-Two SDRAM 64M X 8 DDR DRAM, 0.45 ns, PBGA60
512-Mbit Double-Data-Rate-Two SDRAM 128M X 4 DDR DRAM, 0.5 ns, PBGA60
|
Qimonda AG
|
| ADD8608A8A-75BA ADD8608A8A ADD8608A8A-75B |
Double Data Rate SDRAM
|
ADATA Technology Co., Ltd.
A-DATA[A-Data Technology]
|
