| PART |
Description |
Maker |
| M3604A M3624A |
4K(512 x 8) HIGH-SPEED PROM
|
INTEL[Intel Corporation]
|
| IDT7202LA IDT7202LA120D IDT7202LA120DB IDT7202LA12 |
CMOS ASYNCHRONOUS FIFO 256 x 9 512 x 9 1K x 9
60A, 400V UItrafast Rectifier; Package: TO-247; No of Pins: 2; Container: Rail
CMOS ASYNCHRONOUS FIFO 256 x 9 / 512 x 9 / 1K x 9
CMOS ASYNCHRONOUS FIFO 256 x 9/ 512 x 9/ 1K x 9
20 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
Ultrafast IGBT
RES 205K-OHM 1% 0.063W 100PPM THK-FILM SMD-0402 TR-7-PA2MM
400V N-Channel Logic Level IGBT; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel
30A/200V Ultra Fast Recovery Rectifier Co-Pak; Package: TO-3P; No of Pins: 3; Container: Rail
6A/1500V Damper and 20A/600V Modulation Diode; Package: TO-220F; No of Pins: 3; Container: Rail
Quad, High Speed, 2.7V to 12V, Rail to Rail Amplifier; Package: TSSOP; No of Pins: 14; Container: Rail
Quad, High Speed, 2.7V to 12V, Rail to Rail Amplifier; Package: TSSOP; No of Pins: 14; Container: Tape & Reel
High Performance Amplifier; Package: TSSOP; No of Pins: 14; Container: Tape & Reel
High Performance Amplifier; Package: SOIC; No of Pins: 14; Container: Tape & Reel
High Performance Multiplexer; Package: SOIC; No of Pins: 14; Container: Tape & Reel
Quad, High Speed, 2.7V to 12V, Rail to Rail Amplifier; Package: SOIC; No of Pins: 14; Container: Tape & Reel
High Performance Multiplexer; Package: TSSOP; No of Pins: 14; Container: Tape & Reel
S-Interface 16 Pin DIP (BSEN60950), RoHS compatible CMOS异步FIFO56 × 912 × 9，每1000 × 9
Single, High Speed, 2.5V to 12V, Rail to Rail Amplifier CMOS异步FIFO56 × 912 × 9，每1000 × 9
1200V NPT-Trench IGBT; Package: TT3P0; No of Pins: 3; Container: Rail 1K X 9 OTHER FIFO, 15 ns, PDIP28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 1K X 9 OTHER FIFO, 15 ns, PDSO28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 1K X 9 OTHER FIFO, 80 ns, CDFP28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 CMOS异步FIFO56 × 912 × 9，每1000 × 9
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 120 ns, CDFP28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 12 ns, CDIP28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 12 ns, PDIP28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 35 ns, PDIP28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 35 ns, PDSO28
1200V NPT IGBT; Package: TO-264; No of Pins: 3; Container: Rail 1K X 9 OTHER FIFO, 35 ns, PDSO28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 1K X 9 OTHER FIFO, 30 ns, CQCC32
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 30 ns, CDIP28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 1K X 9 OTHER FIFO, 30 ns, CDFP28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 1K X 9 OTHER FIFO, 30 ns, PDIP28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 1K X 9 OTHER FIFO, 120 ns, CQCC32
1200V NPT-Trench IGBT CMOS异步FIFO56 × 912 × 9，每1000 × 9
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 20 ns, CDIP28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 120 ns, CDIP28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 1K X 9 OTHER FIFO, 120 ns, CDFP28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 1K X 9 OTHER FIFO, 120 ns, PDSO28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 1K X 9 OTHER FIFO, 25 ns, CDIP28
Octal Buffers And Line/MOS Drivers With 3-State Outputs 20-SOIC -40 to 85 CMOS异步FIFO56 × 912 × 9，每1000 × 9
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 65 ns, CQCC32
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 65 ns, PQCC32
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 65 ns, PDIP28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 65 ns, CDFP28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 50 ns, PDIP28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 50 ns, PQCC32
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 1K X 9 OTHER FIFO, 50 ns, CDFP28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 1K X 9 OTHER FIFO, 40 ns, PDSO28
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 1K X 9 OTHER FIFO, 65 ns, PQCC32
|
INTEGRATED DEVICE TECHNOLOGY INC
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| AM29F040B-120EF AM29F040B-120EK AM29F040B-120ED AM |
4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 4兆位12亩8位）的CMOS 5.0伏只，统一部门快闪记忆
4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 512K X 8 FLASH 5V PROM, 120 ns, PDIP32
4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 512K X 8 FLASH 5V PROM, 120 ns, PQCC32
4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 512K X 8 FLASH 5V PROM, 90 ns, PDIP32
4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 512K X 8 FLASH 5V PROM, 55 ns, PDSO32
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| R1RW0408DGE-2PI R1RW0408DI |
Memory>Fast SRAM>Asynchronous SRAM
Wide Temperature Range Version 4M High Speed SRAM (512-kword 】 8-bit)
Wide Temperature Range Version 4M High Speed SRAM (512-kword 隆驴 8-bit)
Wide Temperature Range Version 4M High Speed SRAM (512-kword × 8-bit)
|
Renesas Electronics Corporation
|
| NAND256-A NAND01G-A NAND01GW3A2AZB1 NAND01GW3A0AZB |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位千兆位（x8/x1628 Byte/264字的页面.8V/3V，NAND闪存芯片
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位1千兆位（x8/x1628 Byte/264字的页面1.8V/3V，NAND闪存芯片
128M X 8 FLASH 1.8V PROM, 35 ns, PBGA63
8M X 16 FLASH 1.8V PROM, 35 ns, PDSO48
64M X 8 FLASH 3V PROM, 35 ns, PBGA55
64M X 16 FLASH 1.8V PROM, 35 ns, PDSO48
128M X 8 FLASH 3V PROM, 35 ns, PDSO48
8M X 16 FLASH 3V PROM, 35 ns, PDSO48
32M X 16 FLASH 3V PROM, 35 ns, PDSO48
32M X 16 FLASH 3V PROM, 35 ns, PBGA55
|
ST Microelectronics
意法半导
STMicroelectronics N.V.
NUMONYX
http://
|
| X76F400V8G-2.5 X76F400S8G-2.5 |
512 X 8 FLASH 2.7V PROM, PDSO8 ROHS COMPLIANT, PLASTIC, TSSOP-8
512 X 8 FLASH 2.7V PROM, PDSO8 ROHS COMPLIANT, PLASTIC, SOIC-8
|
IC MICROSYSTEMS Sdn. Bhd.
|
| WS57C45-25 WS57C45-25T WS57C45-35KMB WS57C45-35S W |
HIGH-SPEED 2K x 8 REGISTERED CMOS PROM/RPROM
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| CY7C225A06 |
512 x 8 Registered PROM
|
Cypress Semiconductor
|
| AM29SL800CT150WBC AM29SL800CB120EI AM29SL800CB120E |
CAP 150UF 6.3V 20% TANT SMD-7343-30 TR-7
Quad 2-Input NOR Gates 14-SOIC -55 to 125 8兆位 M中的x 8-Bit/512亩x 16位）.8伏的CMOS只超低电压快闪记忆体
IC LOGIC 1G79 SINGLE POSITIVE-EDGE-TRIGGERED D-TYPE FLIP-FLOP -40 85C SOT-23-5 3000/REEL 1M X 8 FLASH 1.8V PROM, 100 ns, PDSO48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 8兆位 M中的x 8-Bit/512亩x 16位）.8伏的CMOS只超低电压快闪记忆体
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 1M X 8 FLASH 1.8V PROM, 120 ns, PDSO48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 1M X 8 FLASH 1.8V PROM, 100 ns, PDSO48
16-Bit Buffer/Line Driver, OE Active Low
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| HM628511H HM628511HJP-10 HM628511HJP-12 HM628511HJ |
4M High Speed SRAM (512-kword x 8-bit) 4分高速SRAM12 - KWord的8位）
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| 82S131 N82S131A N82S130N N82S131N N82S130A N82S131 |
V(cc): 7.0V; 2K-bit TTL bipolar PROM. For phototyping / volume production, sequential controllers, microprogramming, hardwired algorithms, control store, random logic, code conversion
2K-bit TTL bipolar PROM 512 X 4 OTPROM, 50 ns, PDIP16
|
List of Unclassifed Manufacturers
Philips Semiconductors
ETC
Electronic Theatre Controls, Inc.
NXP Semiconductors N.V.
|
| M95512-W08 M95512RDW3G M95512RDW3P M95512RDW3TG M9 |
512 Kbit Serial SPI bus EEPROMtm with high speed clock
|
STMicroelectronics
|
|
