| PART |
Description |
Maker |
| EN8967A SBE81312 SBE813-TL-E EN8967 |
Schottky Barrier Diode, 30V, 3A, Low IR, Non-Monolithic Dual VEC8 Common Cathode 30V, 3.0A Rectifier
|
ON Semiconductor Sanyo Semicon Device
|
| SB0503EC |
0.5 A, 30 V, SILICON, SIGNAL DIODE Low IR Schottky Barrier Diode 30V, 0.5A Rectifier
|
Sanyo Semicon Device Sanyo Semiconductor
|
| SB30-03P |
Sillicon Epitaxial Schottky Barrier Diode 30V, 3A Rectifier 30V/ 3A Rectifier
|
Sanyo Semicon Device
|
| SS2003M |
Schottky Barrier Diode 30V, 2.0A Rectifier
|
Sanyo Semicon Device
|
| SB20-03P |
Schottky Barrier Diode 30V, 2A Rectifier
|
SANYO
|
| XBS303V19R-12 XBS303V19R-G |
Schottky Barrier Diode, 3A, 30V Type
|
Torex Semiconductor
|
| SB10-03A2 SB10-03A3 |
Schottky Barrier Diode 30V, 1.0A Rectifier
|
Sanyo Electric Co.,Ltd. SANYO[Sanyo Semicon Device]
|
| SS0503SH |
Schottky Barrier Diode 30V, 0.5A Rectifier
|
Sanyo Semicon Device
|
| IRF7526D1 IRF7526D1TR |
Co-packaged HEXFETò Power MOSFET and Schottky Diode FETKYMOSFET & Schottky Diode(Vdss=-30V, Rds(on)=0.20ohm, Schottky Vf=0.39V) FETKY⑩MOSFET FETKY MOSFET & Schottky Diode(Vdss=-30V Rds(on)=0.20ohm Schottky Vf=0.39V) FETKY MOSFET & Schottky Diode(Vdss=-30V, Rds(on)=0.20ohm, Schottky Vf=0.39V) FETKY⑩ MOSFET & Schottky Diode(Vdss=-30V, Rds(on)=0.20ohm, Schottky Vf=0.39V)
|
International Rectifier, Corp. IRF[International Rectifier]
|